Si4842BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.0042 at V = 10 V 28 TrenchFET Power MOSFETs GS 30 29 nC 100 % R Tested 0.0057 at V = 4.5 V g 24 GS SO-8 D SD 1 8 SD 2 7 SD 3 6 GD G 4 5 Top View S Ordering Information: Si4842BDY-T1-E3 (Lead (Pb)-free) Si4842BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 28 C T = 70 C 23 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 20 b, c T = 70 C A 16 A I Pulsed Drain Current 60 DM T = 25 C 5.6 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 2.7 I 35 Single Pulse Avalanche Current AS L = 0.1 mH E 61 mJ Avalanche Energy AS T = 25 C 6.25 C T = 70 C 4.0 C P Maximum Power Dissipation W D b, c T = 25 C A 3.0 b, c T = 70 C A 1.9 T , T - 55 to 150 C Operating Junction and Storage Temperature Range J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 32 42 Maximum Junction-to-Ambient thJA C/W R 15 20 Maximum Junction-to-Foot (Drain) Steady State thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 90 C/W. Document Number: 73532 www.vishay.com S09-0228-Rev. C, 09-Feb-09 1Si4842BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 1 mA Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 30 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.4 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.4 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0034 0.0042 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 15 A 0.0047 0.0057 GS D a g V = 15 V, I = 20 A 90 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3650 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 635 pF oss DS GS C Reverse Transfer Capacitance 300 rss V = 15 V, V = 10 V, I = 25 A 68 100 DS GS D Q Total Gate Charge g 29 43 nC Q Gate-Source Charge 12.6 gs V = 15 V, V = 4.5 V, I = 25 A DS GS D Q Gate-Drain Charge 9.4 gd R Gate Resistance f = 1 MHz 1.25 2 g t Turn-on Delay Time 125 190 d(on) t Rise Time 190 280 r V = 15 V, R = 1.5 DD L t Turn-Off Delay Time 38 60 d(off) I 10 A, V = 4.5 V, R = 1 D GEN g Fall Time t 13 20 f t Turn-on Delay Time 15 25 d(on) Rise Time t 15 25 r ns V = 15 V, R = 1.5 DD L t Turn-Off Delay Time 42 65 d(off) I 10 A, V = 10 V, R = 1 D GEN g Fall Time t 815 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 5.6 S C A a I 60 Pulse Diode Forward Current SM Body Diode Voltage V I = 2.7 A 0.74 1.1 V SD S t Body Diode Reverse Recovery Time 34 55 ns rr Body Diode Reverse Recovery Charge Q 31 50 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 18 a ns Reverse Recovery Rise Time t 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73532 2 S09-0228-Rev. C, 09-Feb-09