Si4900DY Vishay Siliconix Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.058 at V = 10 V 5.3 GS TrenchFET Power MOSFET 60 13 nC 0.072 at V = 4.5 V 4.7 GS APPLICATIONS LCD TV CCFL Inverter SO-8 D D 1 2 S D 1 1 8 1 G D 1 2 7 1 S D 2 3 6 2 G D 2 4 5 2 G G 1 2 Top View S S 1 2 Ordering Information: Si4900DY-T1-E3 (Lead (Pb)-free) Si4900DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 60 DS V Gate-Source Voltage V 20 GS T = 25 C 5.3 C T = 70 C 4.3 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 4.3 b, c T = 70 C 3.4 A A I Pulsed Drain Current (10 s Width) 20 DM T = 25 C 2.6 C I Continuous Source-Drain Diode Current S b, c T = 25 C 1.7 A I Avalanche Current 11 AS L = 0 1 mH E Single-Pulse Avalanche Energy 6.1 mJ AS T = 25 C 3.1 C T = 70 C 2 C P Maximum Power Dissipation W D b, c T = 25 C 2 A b, c T = 70 C A 1.3 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, d R 55 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 33 40 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 73272 www.vishay.com S09-0540-Rev. E, 06-Apr-09 1Si4900DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 V DS GS D V Temperature Coefficient V /T 55 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6 GS(th) GS(th) J V = V , I = 250 A 13 DS GS D Gate-Source Threshold Voltage V V GS(th) V = V , I = 5 mA 2.5 DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 60 V, V = 0 V, T = 85 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 4.3 A 0.046 0.058 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 3.9 A 0.059 0.072 GS D a g V = 15 V, I = 4.3 A 15 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 665 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 75 pF oss DS GS C Reverse Transfer Capacitance 40 rss V = 30 V, V = 10 V, I = 4.3 A 13 20 DS GS D Q Total Gate Charge g 69 nC Q Gate-Source Charge V = 30 V, V = 4.5 V, I = 4.3 A 2.3 gs DS GS D Q Gate-Drain Charge 2.6 gd R Gate Resistance f = 1 MHz 2 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = 30 V, R = 8.8 65 100 r DD L I 3.4 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 15 25 D GEN g d(off) t Fall Time 10 15 f ns Turn-On Delay Time t 10 15 d(on) t Rise Time V = 30 V, R = 8.8 15 25 r DD L I 3.4 A, V = 10 V, R = 1 Turn-Off Delay Time t 20 30 D GEN g d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I 2.6 S C A I Pulse Diode Forward Current 20 SM V I = 1.7 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 60 ns rr Q Body Diode Reverse Recovery Charge 32 50 nC rr I = 1.7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 25 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73272 2 S09-0540-Rev. E, 06-Apr-09