SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 650 DS J Low input capacitance (C ) iss R max. ( ) at 25 C V = 10 V 0.28 DS(on) GS Reduced switching and conduction losses Q max. (nC) 78 g Ultra low gate charge (Q ) g Q (nC) 9 gs Avalanche energy rated (UIS) Q (nC) 17 gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 D 2 D PAK (TO-263) APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) G Power factor correction power supplies (PFC) Lighting D G - High-intensity discharge (HID) S S - Fluorescent ballast lighting Industrial N-Channel MOSFET - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and Halogen-free SiHB15N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 15 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 9.6 A C a Pulsed Drain Current I 39 DM Linear Derating Factor 1.4 W/C b Single Pulse Avalanche Energy E 102 mJ AS Maximum Power Dissipation P 180 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse Diode dV/dt 7.7 c Soldering Recommendations (Peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 11.6 mH, R = 25 , I = 4.2 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S16-0799-Rev. F, 02-May-16 Document Number: 91485 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHB15N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) -0.7 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V /T -0.71 - V Temperature Coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 8 A - 0.23 0.28 DS(on) GS D Forward Transconductance g V = 30 V, I = 8 A - 4.6 - S fs DS D Dynamic Input Capacitance C - 1350 - iss V = 0 V, GS Output Capacitance C -7V = 100 V, 0- oss DS f = 1 MHz Reverse Transfer Capacitance C -5- rss pF Effective Output Capacitance, Energy C -53 - a o(er) Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 177 - o(tr) b Related Total Gate Charge Q -39 78 g Gate-Source Charge Q -1V = 10 V I = 8 A, V = 480 V1- nC gs GS D DS Gate-Drain Charge Q -17- gd Turn-On Delay Time t -16 32 d(on) Rise Time t -26 52 r V = 480 V, I = 8 A, DD D ns Turn-Off Delay Time t -4182 V = 10 V, R = 9.1 d(off) GS g Fall Time t -2244 f Gate Input Resistance R f = 1 MHz, open drain 0.3 0.86 1.7 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 15 S showing the A integral reverse G Pulsed Diode Forward Current I -- 60 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 8 A, V = 0 V - 1.0 1.2 V SD J S GS Reverse Recovery Time t - 302 604 ns rr T = 25 C, I = I = 8 A, J F S Reverse Recovery Charge Q -4.0 8 C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -24 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-0799-Rev. F, 02-May-16 Document Number: 91485 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000