DMN61D9UWQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max D Low On-Resistance BV R max DSS DS(ON) T = +25C A Low Input Capacitance 340mA 2 V = 5.0V GS 60V Fast Switching Speed 2.5 V = 2.5V 300mA GS Low Input/Output Leakage ESD Protected Up To 2kV Description and Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET is designed to minimize the on-state Qualified to AEC-Q101 Standards for High Reliability resistance (R ) and yet maintain superior switching performance, DS(ON) PPAP Capable (Note 4) making it ideal for high efficiency power management applications: Mechanical Data Motor Control Power Management Functions Case: SOT323 Backlighting Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate) D SOT323 D G Gate Protection G S S Diode ESD protected up to 2kV Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN61D9UWQ-7 SOT323 3,000/Tape & Reel DMN61D9UWQ-13 SOT323 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN61D9UWQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 340 A mA I D State 270 T = +70C A Continuous Drain Current (Note 7) V = 5.0V GS T = +25C 400 A t<5s I mA D 300 T = +70C A Maximum Continuous Body Diode Forward Current (Note 7) I 0.4 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 7) I 1.2 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 320 mW P D Steady State 393 Thermal Resistance, Junction to Ambient (Note 6) C/W RJA t<5s 306 Total Power Dissipation (Note 7) P 440 mW D Steady State 289 Thermal Resistance, Junction to Ambient (Note 7) R C/W JA t<5s 235 Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A IDSS VDS = 60V, VGS = 0V Gate-Source Leakage 10 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.5 1.0 V V V = 10V, I = 250A GS(TH) DS D V = 5.0V, I = 0.05A 1.2 2.0 GS D Static Drain-Source On-Resistance 1.6 2.5 R V = 2.5V, I = 0.05A DS(ON) GS D 2.5 3.5 V = 1.8V, I = 0.05A GS D Forward Transconductance Y 200 mS V =10V, I = 0.2A fs DS D Diode Forward Voltage V 0.75 1.4 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 28.5 pF iss V = 30V, V = 0V DS GS Output Capacitance C 3.9 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.5 pF rss Gate Resistance R 65 f = 1MHz , V = 0V, V = 0V g GS DS Total Gate Charge 0.4 nC Q g VGS = 4.5V, VDS = 10V, Gate-Source Charge 0.1 nC Q gs I = 250mA D Gate-Drain Charge 0.1 nC Q gd Turn-On Delay Time 2.1 ns t D(ON) Turn-On Rise Time t 1.8 ns V = 30V, V = 10V, R DD GS Turn-Off Delay Time t 14.4 ns R = 25, I = 200mA D(OFF) G D Turn-Off Fall Time t 8.4 ns F Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 DMN61D9UWQ April 2017 Diodes Incorporated www.diodes.com Document number: DS39554 Rev. 1 - 2