DMC3025LSDQ-13 Diodes Incorporated

DMC3025LSDQ-13 electronic component of Diodes Incorporated
DMC3025LSDQ-13 Diodes Incorporated
DMC3025LSDQ-13 MOSFETs
DMC3025LSDQ-13  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMC3025LSDQ-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMC3025LSDQ-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DMC3025LSDQ-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 25V-30V
Datasheet: DMC3025LSDQ-13 Datasheet (PDF)
Price (USD)
1: USD 0.8114 ea
Line Total: USD 0.81 
Availability : 2366
  
Ship by Thu. 30 Oct to Wed. 05 Nov
QtyUnit Price
1$ 0.8114
10$ 0.642
30$ 0.5696
100$ 0.3244
500$ 0.272
1000$ 0.257

Availability 2366
Ship by Thu. 30 Oct to Wed. 05 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8114
10$ 0.642
30$ 0.5696
100$ 0.3244
500$ 0.272
1000$ 0.257


Availability 11165
Ship by Tue. 28 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3375
10$ 0.8064
100$ 0.484
500$ 0.374
1000$ 0.3388
2500$ 0.2904
5000$ 0.2794

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMC3025LSDQ-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMC3025LSDQ-13 and other electronic components in the MOSFETs category and beyond.

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DMC3025LSDQ 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D Device BV R Max Package DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 8.5A 20m V = 10V GS N-Channel 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7.0A 32m V = 4.5V GS SO-8 Halogen and Antimony Free. Green Device (Note 3) 45m V = -10V -5.5A GS P-Channel -30V Qualified to AEC-Q101 Standards for High Reliability -4.1A 85m VGS = -4.5V PPAP Capable (Note 4) Mechanical Data Description and Applications Case: SO-8 This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic,Gree Molding Compound. Automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 PPAP and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram DC Motor Control Terminals: Finish Matte Tin Annealed Over Copper Leadframe. DC-AC Inverters Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) D2 D1 SO-8 S2 D2 G2 D2 G2 G1 D1 S1 G1 D1 S2 S1 Q2 N-CHANNEL MOSFET Q1 P-CHANNEL MOSFET Top View Pin Configuration Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMC3025LSDQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC3025LSDQ Maximum Ratings N-CHANNEL Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 6.5 A I A D State 5.1 TA = +70C Continuous Drain Current (Note 6) V = 10V GS 8.5 T = +25C A t<10s A I D 6.8 T = +70C A Steady T = +25C 5.3 A I A D State T = +70C 4.1 A Continuous Drain Current (Note 6) V = 4.5V GS 7.0 TA = +25C t<10s A I D 5.5 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 2 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 60 A DM Pulsed Body Diode Current (10s pulse, duty cycle = 1%) I 60 A SM Avalanche Current (Note 8) L = 0.1mH I 14 A AS Avalanche Energy (Note 8) L = 0.1mH E 10 mJ AS Maximum Ratings P-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady -4.2 T = +25C A A I D State -3.2 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -5.5 A t<10s I A D T = +70C -4.3 A Steady T = +25C -3.5 A A I D State -2.3 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS T = +25C -4.1 A t<10s I A D T = +70C -3.2 A Maximum Continuous Body Diode Forward Current (Note 6) I -2 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -30 A DM Pulsed Body Diode Current (10s pulse, duty cycle = 1%) -30 A I SM Avalanche Current (Note 8) L = 0.1mH -14 A I AS Avalanche Energy (Note 8) L = 0.1mH 10 mJ E AS Thermal Characteristics Characteristic Symbol Value Units 1.2 T = +25C A Total Power Dissipation (Note 7) P W D 0.77 T = +70C A Steady State 104 Thermal Resistance, Junction to Ambient (Note 7) R C/W JA t<10s 62 T = +25C 1.5 A Total Power Dissipation (Note 6) W PD T = +70C 0.95 A Steady State 83 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 49 C/W Thermal Resistance, Junction to Case (Note 6) R 15 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 8. I and E rating are based on low frequency and duty cycles to keep T = 25C. AS AS J 2 of 11 DMC3025LSDQ October 2017 Diodes Incorporated www.diodes.com Document number: DS40186 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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