SiZ710DT Vishay Siliconix N-Channel 20 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) Definition DS DS(on) D g TrenchFET Power MOSFETs a 0.0068 at V = 10 V 16 GS Channel-1 20 6.9 nC 100 % R and UIS Tested g a 0.0090 at V = 4.5 V GS 16 Compliant to RoHS Directive 2002/95/EC a 0.0033 at V = 10 V 35 GS APPLICATIONS Channel-2 20 18.2 nC a 0.0043 at V = 4.5 V 35 GS Notebook System Power POL PowerPAIR 6 x 3.7 Synchronous Buck Converter 3.73 mm Pin 1 D 1 G 1 1 D 1 2 D 1 D 1 3 G 1 G S /D N-Channel 1 2 1 2 S /D 1 2 MOSFET S (Pin 7) 2 6 6 mm S 2 5 G 2 4 N-Channel 2 Ordering Information: MOSFET S 2 SiZ710DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Channel-1Channel-2Unit Drain-Source Voltage V 20 DS V V 20 Gate-Source Voltage GS a a T = 25 C 16 35 C a a T = 70 C 16 35 C I Continuous Drain Current (T = 150 C) D J a, b, c b, c T = 25 C A 16 30 b, c b, c T = 70 C A 15 24 A Pulsed Drain Current I 70 100 DM a a T = 25 C 16 C 35 Continuous Source Drain Diode Current I S b, c b, c T = 25 C A 3.2 3.8 Single Pulse Avalanche Current I 20 30 AS L = 0.1 mH E Single Pulse Avalanche Energy 20 45 mJ AS T = 25 C 27 48 C T = 70 C 17 31 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 3.9 4.6 b, c b, c T = 70 C A 2.5 3 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Typ. Max. Typ. Max. Parameter Symbol Unit b, f t 10 s R 24 32 20 27 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 3.5 4.6 2 2.6 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 C/W for channel-1 and 65 C/W for channel-2. Document Number: 65733 www.vishay.com S11-2379-Rev. B, 28-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiZ710DT Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V = 0 V, I = 250 A Ch-1 20 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = 250 A Ch-2 20 GS D I = 250 A Ch-1 19 D V Temperature Coefficient V /T DS DS J I = 250 A Ch-2 20 D mV/C I = 250 A Ch-1 - 4.8 D V Temperature Coefficient V /T GS(th) GS(th) J I = 250 A Ch-2 - 5.3 D V = V , I = 250 A Ch-1 1 2.2 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = 250 A Ch-2 1 2.2 DS GS D Ch-1 100 I V = 0 V, V = 20 V Gate Source Leakage nA GSS DS GS Ch-2 100 V = 20 V, V = 0 V Ch-1 1 DS GS V = 20 V, V = 0 V Ch-2 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C Ch-1 5 DS GS J V = 20 V, V = 0 V, T = 55 C Ch-2 5 DS GS J V 5 V, V = 10 V Ch-1 15 DS GS b I A On-State Drain Current D(on) V 5 V, V = 10 V Ch-2 20 DS GS V = 10 V, I = 19 A Ch-1 0.0055 0.0068 GS D V = 10 V, I = 20 A Ch-2 0.0027 0.0033 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 16.5 A Ch-1 0.0072 0.0090 GS D V = 4.5 V, I = 20 A Ch-2 0.0034 0.0043 GS D V = 10 V, I = 19 A Ch-1 45 DS D b g S Forward Transconductance fs V = 10 V, I = 20 A Ch-2 85 DS D a Dynamic Ch-1 820 C Input Capacitance iss Channel-1 Ch-2 2310 V = 10 V, V = 0 V, f = 1 MHz DS GS Ch-1 290 C Output Capacitance pF oss Ch-2 730 Channel-2 Ch-1 115 V = 10 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss Ch-2 305 V = 10 V, V = 10 V, I = 19 A Ch-1 11.5 18 DS GS D V = 10 V, V = 10 V, I = 20 A Ch-2 38 60 DS GS D Total Gate Charge Q g Ch-1 6.9 11 Channel-1 Ch-2 18.2 28 nC V = 10 V, V = 4.5 V, I = 16.8 A DS GS D Ch-1 2.4 Q Gate-Source Charge gs Ch-2 6.6 Channel-2 Ch-1 1.7 V = 10 V, V = 4.5 V, I = 20 A DS GS D Q Gate-Drain Charge gd Ch-2 4.8 Ch-1 0.3 1.3 2.6 R Gate Resistance f = 1 MHz g Ch-2 0.2 0.8 1.6 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com Document Number: 65733 2 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000