Product Information

VS-120NQ045PBF

VS-120NQ045PBF electronic component of Vishay

Datasheet
Vishay Semiconductors Schottky Diodes & Rectifiers 120 Amp 45 Volt

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 33.4002 ea
Line Total: USD 33.4

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 33.4002
10 : USD 32.1188
20 : USD 32.1069
100 : USD 31.1577
260 : USD 30.8255

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Height
Length
Operating Temperature Range
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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VS-120NQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 120 A FEATURES Lug terminal anode 150 C T operation J Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base cathode Designed and qualified for industrial level HALF-PAK (D-67) UL approved file E222165 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION I 120 A F(AV) The VS-120NQ.. high current Schottky rectifier module V 45 V R series has been optimized for low reverse leakage at high Package HALF-PAK (D-67) temperature. The proprietary barrier technology allows for Circuit Single diode reliable operation up to 150 C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 120 A F(AV) V 45 V RRM I t = 5 s sine 26 000 A FSM p V 120 A , T = 125 C 0.62 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-120NQ045PbF UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 105 C, rectangular waveform 120 F(AV) C See fig. 5 A Maximum peak one cycle 5 s sine or 3 s rect. pulse 26 000 Following any rated load non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 1550 RRM See fig. 7 Non-repetitive avalanche energy E T = 25 C, I = 13 A, L = 1 mH 81 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 13 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 11-May-17 Document Number: 94458 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-120NQ045PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 120 A 0.63 T = 25 C J 240 A 0.86 Maximum forward voltage drop (1) V V FM See fig. 1 120 A 0.62 T = 125 C J 240 A 0.81 T = 25 C 10 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 500 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 5200 pF T R DC Typical series inductance L From top of terminal hole to mounting plane 7.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 500 s THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T , T -55 to 150 C J Stg DC operation Maximum thermal resistance, junction to case R 0.38 thJC See fig. 4 C/W Typical thermal resistance, case to heatsink R Mounting surface, smooth, and greased 0.05 thCS 30 g Approximate weight 1.06 oz. minimum 3 (26.5) Mounting torque maximum 4 (35.4) N m Non-lubricated threads (lbf in) minimum 3.4 (30) Terminal torque maximum 5 (44.2) Case style HALF-PAK module 1000 10 000 T = 150 C 1000 J T = 125 C J 100 100 T = 100 C J 10 T = 150 C J T = 75 C J 10 1 T = 125 C J T = 50 C J 0.1 T = 25 C T = 25 C J J 1 0.01 010.5.0 1.5 2.0 2.5 01501520 25 3035 40 45 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-May-17 Document Number: 94458 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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