BT151S-650L,118 WeEn Semiconductor

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses nxp.com use salesaddresses ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) NXP Semiconductors N.V. year . All rights reserved becomes WeEn Semiconductors Co., Ltd. year . All rights reserved If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses ween-semi.com). Thank you for your cooperation and understanding, WeEn SemiconductorsBT151S series L and R Thyristors Rev. 05 9 October 2006 Product data sheet 1. Product prole 1.1 General description Passivated thyristors in a SOT428 plastic package. 1.2 Features n High thermal cycling performance n Surface-mounted package n High bidirectional blocking voltage capability 1.3 Applications n Motor control n Static switching n Ignition circuits n Protection circuits 1.4 Quick reference data n V 500 V (BT151S-500L/R) n I 120 A (t = 10 ms) DRM TSM n V 500 V (BT151S-500L/R) n I 12 A RRM T(RMS) n V 650 V (BT151S-650L/R) n I 7.5 A DRM T(AV) n V 650 V (BT151S-650L/R) n I 5 mA (BT151S series L) RRM GT n V 800 V (BT151S-800R) n I 15 mA (BT151S series R) DRM GT n V 800 V (BT151S-800R) RRM 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 cathode (K) mb AK 2 anode (A) G 3 gate (G) sym037 mb mounting base connected to anode 2 1 3 SOT428 (DPAK)