BYR29X-800PQ WeEn Semiconductor

BYR29X-800P Ultrafast power diode 5 May 2016 Product data sheet 1. General description Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Fast switching Low forward voltage drop Soft recovery characteristic 3. Applications Discontinuous Current Mode (DCM) Power Factor Correction (PFC) High frequency switched-mode power supplies TV power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 800 V RRM voltage I average forward = 0.5 T 88 C square-wave - - 8 A F(AV) h current pulse Fig. 1 Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 88 C - - 16 A FRM p h current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave - - 80 A FSM p j(init) forward current pulse Fig. 4 t = 8.3 ms T = 25 C sine-wave - - 88 A p j(init) pulse Fig. 4 Static characteristics V forward voltage I = 8 A T = 25 C Fig. 6 - 1.4 1.7 V F F j I = 8 A T = 150 C Fig. 6 - 1.2 1.5 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 40 55 ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors BYR29X-800P Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode K A mb 001aaa020 2 A anode mb n.c. mounting base isolated 1 2 TO-220F (SOD113) BYR29X-800P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 5 May 2016 2 / 10