Product Information

WSB5511M-2/TR

WSB5511M-2/TR electronic component of Will Semiconductor

Schottky Barrier Diodes (SBD) SMA (DO-214AC) RoHS
Manufacturer: Will Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1441 ea
Line Total: USD 0.72

0 - Global Stock
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 5
Multiples : 5

Stock Image

WSB5511M-2/TR
Will Semiconductor

5 : USD 0.1441
50 : USD 0.116
150 : USD 0.0957
500 : USD 0.0787
2500 : USD 0.076
5000 : USD 0.0746

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Voltage - Dc Reverse Vr Max
Current - Average Rectified Io
Voltage - Forward Vf Max @ If
Reverse Leakage Current Ir
Reverse Voltage Vr
Diode Configuration
Forward Voltage Vf@If
Average Rectified Current Io
LoadingGif

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Additional Infomation About Product

The WSB5511M-2/TR is a Schottky Barrier Diode (SBD) manufactured by Will Semiconductor with an SMA package. The package type is DO-214AC, and it is compliant with RoHS. This diode has a maximum forward voltage rating of 10 volts, a peak repetition reverse voltage of 400 volts, a junction temperature of 150 degrees Celsius, and a peak forward current of 5.5 amperes. Its reverse leakage current is 40 µA, and it has a power dissipation of 500 mW. This diode is designed for high frequency switching applications in high power circuits and for the protection of circuits against overvoltage transients.

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Will Semiconductor may also be referenced as

Will Semicon
Will Semiconductor
WILLSEMI(Will Semicon)

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