X-On Electronics has gained recognition as a prominent supplier of W29N01GVSIAA NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N01GVSIAA NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N01GVSIAA Winbond

Name: W29N01GVSIAA
Brand: Winbond
SKU: W29N01GVSIAA_Winbond
Availability: OutOfStock
Rating: 5 (11 reviews)

W29N01GVSIAA electronic component of Winbond

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Part No.	W29N01GVSIAA
Manufacturer:	Winbond
Category:	NAND Flash
Description:	NAND Flash Serial 3V 1G-bit 128M x 8 25ns
Datasheet:	W29N01GVSIAA Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3: USD 3.7313 ea
Line Total: USD 11.19

Availability - 0

MOQ: 3 Multiples: 3
Pack Size: 3

W29N01GVSIAA More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 20 Jun to Thu. 26 Jun MOQ : 3 Multiples : 3	3 : USD 3.7313

We are delighted to provide the W29N01GVSIAA from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N01GVSIAA and other electronic components in the NAND Flash category and beyond.

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Additional Infomation About Product

W29N01GV W29N01GV 1G-BIT 3.3V NAND FLASH MEMORY st Release Date: February 1 , 2016 1 Revision F W29N01GV Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 7 2. FEATURES ....................................................................................................................................... 7 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 8 3.1 Pin assignment 48-pin TSOP1 ............................................................................................. 8 3.2 Pin assignment 48 ball VFBGA ............................................................................................ 9 3.3 Pin assignment 63 ball VFBGA .......................................................................................... 10 3.4 Pin Descriptions .................................................................................................................. 11 4. PIN DESCRIPTIONS ...................................................................................................................... 12 4.1 Chip Enable ( CE) .............................................................................................................. 12 4.2 Write Enable ( WE) ............................................................................................................ 12 4.3 Read Enable ( RE) ............................................................................................................ 12 4.4 Address Latch Enable (ALE) .............................................................................................. 12 4.5 Command Latch Enable (CLE) .......................................................................................... 12 4.6 Write Protect ( WP) ............................................................................................................ 12 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 12 4.8 Input and Output (I/Ox) ....................................................................................................... 12 5. BLOCK DIAGRAM .......................................................................................................................... 13 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 14 6.1 Array Organization .............................................................................................................. 14 7. MODE SELECTION TABLE ........................................................................................................... 15 8. COMMAND TABLE......................................................................................................................... 16 9. DEVICE OPERATIONS .................................................................................................................. 17 9.1 READ operation .................................................................................................................. 17 9.1.1 PAGE READ (00h-30h)......................................................................................................... 17 9.1.2 CACHE READ OPERATIONS .............................................................................................. 18 9.1.3 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 22 9.1.4 READ ID (90h) ...................................................................................................................... 23 9.1.5 READ PARAMETER PAGE (ECh) ....................................................................................... 24 9.1.6 READ STATUS (70h)............................................................................................................ 26 9.1.7 READ UNIQUE ID (EDh) ...................................................................................................... 28 9.2 PROGRAM operation ......................................................................................................... 29 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 29 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 29 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 30 9.2.4 CACHE PROGRAM (80h-15h) ............................................................................................. 30 9.3 COPY BACK operation....................................................................................................... 32 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 32 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 32 9.4 BLOCK ERASE operation .................................................................................................. 34 9.4.1 BLOCK ERASE (60h-D0h) .................................................................................................... 34 9.5 RESET operation ................................................................................................................ 35 9.5.1 RESET (FFh) ........................................................................................................................ 35 st Release Date: February 1 , 2016 2 Revision F

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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Manufacturer Winbond Winbond
Product Category NAND Flash NAND Flash
Interface Type Serial Serial
Organisation 128M 128M
Timing Type Synchronous Synchronous
Data Bus Width 8 (B) 8 (B)
Supply Voltage - Min 2.7 V 2.7 V
Supply Voltage - Max 3.6 V 3.6 V
Supply Current - Max 35 mA 35 mA
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature 85 C 85 C
Programmable Yes Yes
Boot Type Not Required Not Required
Density 1073741824(Bit) 1073741824(Bit)
Address Bus 28(B) 28(B)
Cell Type Nand Nand
Operating Temp Range - 40 C To 85 C - 40 C To 85 C
Program/Erase Volt Typ 2.7 To 3.6(V) 2.7 To 3.6(V)
Rad Hardened No No
Operating Temperature Classification industrial industrial
Access Time Max 25 ns 25 ns
Operating Supply Voltage Typ 3 V 3 V