W29N01HVDINF Winbond

W29N01HVDINF electronic component of Winbond
W29N01HVDINF Winbond
W29N01HVDINF NAND Flash
W29N01HVDINF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of W29N01HVDINF NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N01HVDINF NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

Part No. W29N01HVDINF
Manufacturer: Winbond
Category: NAND Flash
Description: NAND Flash 1G-bit NAND flash, 3V, 4-bit ECC, 3V, x8
Datasheet: W29N01HVDINF Datasheet (PDF)
Price (USD)
1: USD 0.3689 ea
Line Total: USD 0.37 
Availability : 0
  
QtyUnit Price
1$ 0.3689
10$ 0.3481
25$ 0.3411
50$ 0.3411
100$ 0.3411

Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3689
10$ 0.3481
25$ 0.3411
50$ 0.3411
100$ 0.3411


Availability 0
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 260
Multiples : 260
QtyUnit Price
260$ 3.6498
520$ 3.5227
1040$ 3.3842

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the W29N01HVDINF from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N01HVDINF and other electronic components in the NAND Flash category and beyond.

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W29N01HVXINF W29N01HVXINF 1G-BIT 3.3V NAND FLASH MEMORY th Release Date: January 11 , 2018 1 Revision D W29N01HVXINF Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 6 2. FEATURES ....................................................................................................................................... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 7 3.1 Pin assignment 48-pin TSOP1(x8) ....................................................................................... 7 3.2 Pin assignment 48 ball VFBGA (x8) ..................................................................................... 8 3.3 Pin assignment 63 ball VFBGA ............................................................................................ 9 3.4 Pin Descriptions .................................................................................................................. 10 4. PIN DESCRITPIONS ...................................................................................................................... 11 4.1 Chip Enable ( CE) .............................................................................................................. 11 4.2 Write Enable ( WE) ............................................................................................................ 11 4.3 Read Enable ( RE) ............................................................................................................ 11 4.4 Address Latch Enable (ALE) .............................................................................................. 11 4.5 Command Latch Enable (CLE) .......................................................................................... 11 4.6 Write Protect ( WP) ............................................................................................................ 11 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 11 4.8 Input and Output (I/Ox) ....................................................................................................... 11 5. BLOCK DIAGRAM .......................................................................................................................... 12 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 13 6.1 Array Organization (x8) ...................................................................................................... 13 7. MODE SELECTION TABLE ........................................................................................................... 14 8. COMMAND TABLE......................................................................................................................... 15 9. DEVICE OPERATIONS .................................................................................................................. 16 9.1 READ operation .................................................................................................................. 16 9.1.1 PAGE READ (00h-30h)......................................................................................................... 16 9.1.2 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 17 9.1.3 READ ID (90h) ...................................................................................................................... 17 9.1.4 READ PARAMETER PAGE (ECh) ....................................................................................... 18 9.1.5 READ STATUS (70h)............................................................................................................ 21 9.2 PROGRAM operation ......................................................................................................... 22 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 22 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 22 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 23 9.3 COPY BACK operation....................................................................................................... 24 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 24 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 24 9.4 BLOCK ERASE operation .................................................................................................. 26 9.4.1 BLOCK ERASE (60h-D0h) .................................................................................................... 26 9.5 RESET operation ................................................................................................................ 27 9.5.1 RESET (FFh) ........................................................................................................................ 27 9.6 WRITE PROTECT .............................................................................................................. 28 10. ELECTRICAL CHARACTERISTICS............................................................................................... 30 10.1 Absolute Maximum Ratings ................................................................................................ 30 10.2 Operating Ranges .............................................................................................................. 30 th Release Date: January 11 , 2018 2 Revision D

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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