X-On Electronics has gained recognition as a prominent supplier of W29N01HZBINA NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N01HZBINA NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N01HZBINA Winbond

Name: W29N01HZBINA
Brand: Winbond
SKU: W29N01HZBINA_Winbond
Availability: InStock
Rating: 5 (11 reviews)

W29N01HZBINA electronic component of Winbond

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Part No.	W29N01HZBINA
Manufacturer:	Winbond
Category:	NAND Flash
Description:	NAND Flash 1G-bit NAND flash 1.8V 1-bit ECC x8
Datasheet:	W29N01HZBINA Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 5.8 ea
Line Total: USD 5.8

Availability - 203
Ship by Tue. 10 Jun to Thu. 12 Jun

MOQ: 1 Multiples: 1
Pack Size: 1

W29N01HZBINA More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

87

Ship by Thu. 12 Jun to Wed. 18 Jun

MOQ : 40
Multiples : 1

40 : USD 6.6144
50 : USD 5.2728
55 : USD 4.8009
59 : USD 4.407

203

Ship by Tue. 10 Jun to Thu. 12 Jun

MOQ : 1
Multiples : 1

1 : USD 5.8
10 : USD 3.938
25 : USD 3.652
100 : USD 3.41
210 : USD 3.234
1050 : USD 3.212
2520 : USD 3.19
5040 : USD 3.124

Specifications

Manufacturer

Winbond Winbond

Product Category

NAND Flash NAND Flash

Mounting Style

SMD/SMT SMD/SMT

Package / Case

VFBGA - 63 VFBGA - 63

Series

W29N01HZ W29N01HZ

Memory Size

1 Gbit 1 Gbit

Interface Type

Parallel Parallel

Organisation

128 M x 8 128 M x 8

Timing Type

Asynchronous Asynchronous

Data Bus Width

8 bit 8 bit

Supply Voltage - Min

1.7 V 1.7 V

Supply Voltage - Max

1.95 V 1.95 V

Supply Current - Max

25 mA 25 mA

Minimum Operating Temperature

- 40 C - 40 C

Maximum Operating Temperature

+ 85 C + 85 C

Packaging

Tray Tray

Hts Code

8542320051 8542320051

Notes:- Show Stocked Products With Similar Attributes.

W29N01HZBINA Alternative Parts

We are delighted to provide the W29N01HZBINA from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N01HZBINA and other electronic components in the NAND Flash category and beyond.

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Additional Infomation About Product

W29N01HZ/W W29N01HZ/W 1G-BIT 1.8V NAND FLASH MEMORY th Release Date: January, 11 , 2018 1 Revision C W29N01HZ/W Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 6 2. FEATURES ....................................................................................................................................... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 7 3.1 Pin assignment 48 pin TSOP1 (x8) ...................................................................................... 7 3.2 Pin assignment 48 ball VFBGA (x8) ..................................................................................... 8 3.3 Pin assignment 48 ball VFBGA (x16) ................................................................................... 9 3.4 Pin assignment 63 ball VFBGA (x8) ................................................................................... 10 3.5 Pin assignment 63 ball VFBGA (x16) ................................................................................. 11 3.6 Pin Descriptions .................................................................................................................. 12 4. PIN DESCRITPIONS ...................................................................................................................... 13 4.1 Chip Enable ( CE) .............................................................................................................. 13 4.2 Write Enable ( WE) ............................................................................................................ 13 4.3 Read Enable ( RE) ............................................................................................................ 13 4.4 Address Latch Enable (ALE) .............................................................................................. 13 4.5 Command Latch Enable (CLE) .......................................................................................... 13 4.6 Write Protect ( WP) ............................................................................................................ 13 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 13 4.8 Input and Output (I/Ox) ....................................................................................................... 13 5. BLOCK DIAGRAM .......................................................................................................................... 14 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 15 6.1 Array Organization (x8) ...................................................................................................... 15 6.2 Array Organization (x16) .................................................................................................... 16 7. MODE SELECTION TABLE ........................................................................................................... 17 8. COMMAND TABLE......................................................................................................................... 18 9. DEVICE OPERATIONS .................................................................................................................. 19 9.1 READ operation .................................................................................................................. 19 9.1.1 PAGE READ (00h-30h)......................................................................................................... 19 9.1.2 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 20 9.1.3 READ ID (90h) ...................................................................................................................... 20 9.1.4 READ PARAMETER PAGE (ECh) ....................................................................................... 21 9.1.5 READ STATUS (70h)............................................................................................................ 23 9.2 PROGRAM operation ......................................................................................................... 25 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 25 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 25 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 26 9.3 COPY BACK operation....................................................................................................... 27 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 27 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 27 9.4 BLOCK ERASE operation .................................................................................................. 29 9.4.1 BLOCK ERASE (60h-D0h) .................................................................................................... 29 9.5 RESET operation ................................................................................................................ 30 9.5.1 RESET (FFh) ........................................................................................................................ 30 9.6 WRITE PROTECT .............................................................................................................. 31 th Release Date: January, 11 , 2018 2 Revision C

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Winbond Elec may also be referenced as

WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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Availability	Price	Buy Price	Quantity
87 Ship by Thu. 12 Jun to Wed. 18 Jun MOQ : 40 Multiples : 1	40 : USD 6.6144 50 : USD 5.2728 55 : USD 4.8009 59 : USD 4.407

203 Ship by Tue. 10 Jun to Thu. 12 Jun MOQ : 1 Multiples : 1	1 : USD 5.8 10 : USD 3.938 25 : USD 3.652 100 : USD 3.41 210 : USD 3.234 1050 : USD 3.212 2520 : USD 3.19 5040 : USD 3.124

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Hot	W29N02GVSIAA FLASH FLASH 2Gb (256M x 8) Parallel TSOP-48 RoHS Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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