Product Information

W9425G6KH-5 TR

W9425G6KH-5 TR electronic component of Winbond

Datasheet
DRAM 256Mb DDR SDRAM x16, 200Mhz, 65nm T&R

Manufacturer: Winbond
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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0 - WHS 1

MOQ : 1000
Multiples : 1000
1000 : USD 2.0525
10000 : USD 2.0009
100000 : USD 1.6783
500000 : USD 1.4843
1000000 : USD 1.4818
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W9425G6KH 4 M 4 BANKS 16 BITS DDR SDRAM Table of Contents- 1. GENERAL DESCRIPTION ............................................................................................................................. 4 2. FEATURES .................................................................................................................................................... 4 3. ORDER INFORMATION ................................................................................................................................ 4 4. KEY PARAMETERS ...................................................................................................................................... 5 5. PIN CONFIGURATION .................................................................................................................................. 6 6. PIN DESCRIPTION ........................................................................................................................................ 7 7. BLOCK DIAGRAM ......................................................................................................................................... 8 8. FUNCTIONAL DESCRIPTION ....................................................................................................................... 9 8.1 Power Up Sequence .......................................................................................................................... 9 8.2 Command Function .......................................................................................................................... 10 8.2.1 Bank Activate Command ...................................................................................................... 10 8.2.2 Bank Precharge Command .................................................................................................. 10 8.2.3 Precharge All Command ...................................................................................................... 10 8.2.4 Write Command ................................................................................................................... 10 8.2.5 Write with Auto-precharge Command................................................................................... 10 8.2.6 Read Command ................................................................................................................... 10 8.2.7 Read with Auto-precharge Command .................................................................................. 10 8.2.8 Mode Register Set Command .............................................................................................. 11 8.2.9 Extended Mode Register Set Command .............................................................................. 11 8.2.10 No-Operation Command ...................................................................................................... 11 8.2.11 Burst Read Stop Command .................................................................................................. 11 8.2.12 Device Deselect Command .................................................................................................. 11 8.2.13 Auto Refresh Command ....................................................................................................... 11 8.2.14 Self Refresh Entry Command ............................................................................................... 12 8.2.15 Self Refresh Exit Command ................................................................................................. 12 8.2.16 Data Write Enable /Disable Command ................................................................................. 12 8.3 Read Operation ................................................................................................................................ 12 8.4 Write Operation ................................................................................................................................ 13 8.5 Precharge ......................................................................................................................................... 13 8.6 Burst Termination ............................................................................................................................. 13 8.7 Refresh Operation ............................................................................................................................ 13 8.8 Power Down Mode ........................................................................................................................... 14 8.9 Input Clock Frequency Change during Precharge Power Down Mode ............................................ 14 8.10 Mode Register Operation ................................................................................................................. 14 8.10.1 Burst Length field (A2 to A0) ................................................................................................ 14 8.10.2 Addressing Mode Select (A3) ............................................................................................... 15 8.10.3 CAS Latency field (A6 to A4) ................................................................................................ 16 8.10.4 DLL Reset bit (A8) ................................................................................................................ 16 8.10.5 Mode Register /Extended Mode register change bits (BA0, BA1) ........................................ 16 8.10.6 Extended Mode Register field .............................................................................................. 16 8.10.7 Reserved field ...................................................................................................................... 16 9. OPERATION MODE .................................................................................................................................... 17 Publication Release Date: Nov. 17, 2014 Revision: A02 - 1 - W9425G6KH 9.1 Simplified Truth Table ...................................................................................................................... 17 9.2 Function Truth Table ........................................................................................................................ 18 9.3 Function Truth Table for CKE ........................................................................................................... 21 9.4 Simplified Stated Diagram ................................................................................................................ 22 10. ELECTRICAL CHARACTERISTICS ............................................................................................................ 23 10.1 Absolute Maximum Ratings .............................................................................................................. 23 10.2 Recommended DC Operating Conditions ........................................................................................ 23 10.3 Capacitance ..................................................................................................................................... 24 10.4 Leakage and Output Buffer Characteristics ...................................................................................... 24 10.5 DC Characteristics ........................................................................................................................... 25 10.6 AC Characteristics and Operating Condition .................................................................................... 26 10.7 AC Test Conditions .......................................................................................................................... 27 11. SYSTEM CHARACTERISTICS FOR DDR SDRAM..................................................................................... 29 11.1 Table 1: Input Slew Rate for DQ, DQS, and DM .............................................................................. 29 11.2 Table 2: Input Setup & Hold Time Derating for Slew Rate ............................................................... 29 11.3 Table 3: Input/Output Setup & Hold Time Derating for Slew Rate .................................................... 29 11.4 Table 4: Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate .................................... 29 11.5 Table 5: Output Slew Rate Characteristics (x16 Devices only) ........................................................ 29 11.6 Table 6: Output Slew Rate Matching Ratio Characteristics .............................................................. 30 11.7 Table 7: AC Overshoot/Undershoot Specification for Address and Control Pins.............................. 30 11.8 Table 8: Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins............................... 31 11.9 System Notes: .................................................................................................................................. 32 12. TIMING WAVEFORMS ................................................................................................................................ 34 12.1 Command Input Timing .................................................................................................................... 34 12.2 Timing of the CLK Signals ................................................................................................................ 34 12.3 Read Timing (Burst Length = 4) ....................................................................................................... 35 12.4 Write Timing (Burst Length = 4) ....................................................................................................... 36 12.5 DM, DATA MASK (W9425G6KH) ..................................................................................................... 37 12.6 Mode Register Set (MRS) Timing ..................................................................................................... 38 12.7 Extend Mode Register Set (EMRS) Timing ...................................................................................... 39 12.8 Auto-precharge Timing (Read Cycle, CL = 2) .................................................................................. 40 12.9 Auto-precharge Timing (Read cycle, CL = 2), continued .................................................................. 41 12.10 Auto-precharge Timing (Write Cycle) ............................................................................................... 42 12.11 Read Interrupted by Read (CL = 2, BL = 2, 4, 8) .............................................................................. 43 12.12 Burst Read Stop (BL = 8) ................................................................................................................. 43 12.13 Read Interrupted by Write & BST (BL = 8) ....................................................................................... 44 12.14 Read Interrupted by Precharge (BL = 8) .......................................................................................... 44 12.15 Write Interrupted by Write (BL = 2, 4, 8) ........................................................................................... 45 12.16 Write Interrupted by Read (CL = 2, BL = 8) ...................................................................................... 45 12.17 Write Interrupted by Read (CL = 3, BL = 4) ...................................................................................... 46 12.18 Write Interrupted by Precharge (BL = 8) ........................................................................................... 46 12.19 2 Bank Interleave Read Operation (CL = 2, BL = 2) ......................................................................... 47 12.20 2 Bank Interleave Read Operation (CL = 2, BL = 4) ......................................................................... 47 12.21 4 Bank Interleave Read Operation (CL = 2, BL = 2) ......................................................................... 48 12.22 4 Bank Interleave Read Operation (CL = 2, BL = 4) ......................................................................... 48 12.23 Auto Refresh Cycle .......................................................................................................................... 49 12.24 Precharged/Active Power Down Mode Entry and Exit Timing .......................................................... 49 12.25 Input Clock Frequency Change during Precharge Power Down Mode Timing ................................. 49 12.26 Self Refresh Entry and Exit Timing ................................................................................................... 50 Publication Release Date: Nov. 17, 2014 Revision: A02 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Winbond Elec
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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