Product Information

DMG1016UDWQ-7

DMG1016UDWQ-7 electronic component of Diodes Incorporated

Datasheet
Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R

Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0736 ea
Line Total: USD 220.8

666390 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2415 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

DMG1016UDWQ-7
Diodes Incorporated

5 : USD 0.1551
50 : USD 0.137
150 : USD 0.1292
500 : USD 0.1194
2500 : USD 0.1152
5000 : USD 0.1126

666390 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000

Stock Image

DMG1016UDWQ-7
Diodes Incorporated

3000 : USD 0.0736

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Brand
Gate-Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Device BV R I T = +25C DSS DS(ON) D A Low Gate Threshold Voltage Q1 20V 0.45 V = 4.5V 1066mA GS Low Input Capacitance Q2 -20V 0.75 V = -4.5V -845mA GS Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Description Ultra-Small Surface Mount Package This new generation MOSFET has been designed to minimize the on- ESD Protected state resistance (R ) and yet maintain superior switching DS(ON) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) performance, making it ideal for high efficiency power management Halogen and Antimony Free. Green Device (Note 3) applications. Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Applications Mechanical Data Battery Operated Systems and Solid-State Relays Case: SOT363 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Case Material: Molded Plastic, Green Molding Compound. Memories, Transistors, etc. UL Flammability Classification Rating 94V-0 Power Supply Converter Circuits Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D G S 1 2 2 Q Q 1 2 S G D 1 1 2 ESD PROTECTED Top View Top View Internal Schematic Ordering Information (Note 5) Part Number Compliance Case Packaging DMG1016UDW-7 Standard SOT363 3000/Tape & Reel DMG1016UDWQ-7 Automotive SOT363 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMG1016UDW Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 330 mW P D Thermal Resistance, Junction to Ambient (Note 6) R 379 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Maximum Ratings N-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 20 V V DSS Gate-Source Voltage 6 V V GSS Steady T = +25C 1066 A Continuous Drain Current (Note 6) I mA D State 690 T = +85C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 3.2 A I DM Maximum Ratings P-CHANNEL Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 6 V GSS Steady T = +25C -845 A Continuous Drain Current (Note 6) mA I D State -548 T = +85C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -2.2 A DM Electrical Characteristics N-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BVDSS VGS = 0V, ID = 250A 100 nA Zero Gate Voltage Drain Current T = +25C I V =20V, V = 0V C DSS DS GS Gate-Source Leakage 1.0 A I V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.5 1.0 V V V = V , I = 250A GS(TH) DS GS D 0.3 0.45 V = 4.5V, I = 600mA GS D Static Drain-Source On-Resistance R 0.4 0.6 V = 2.5V, I = 500mA DS(ON) GS D 0.5 0.75 V = 1.8V, I = 350mA GS D Forward Transfer Admittance Y 1.4 S V = 10V, I = 400mA fs DS D Diode Forward Voltage (Note 7) V 0.7 1.2 V V = 0V, I = 150mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 60.67 pF iss V = 10V, V = 0V, DS GS Output Capacitance C 9.68 pF oss f = 1.0MHz Reverse Transfer Capacitance C 5.37 pF rss Total Gate Charge Q 736.6 nC g VGS = 4.5V, VDS = 10V, Gate-Source Charge 93.6 nC Q gs I = 250mA D Gate-Drain Charge 116.6 nC Q gd Turn-On Delay Time t 5.1 ns D(ON) Turn-On Rise Time t 7.4 ns V = 10V, V = 4.5V, R DD GS Turn-Off Delay Time t 26.7 ns R = 47, R = 10 D(OFF) L G Turn-Off Fall Time t 12.3 ns F Notes: 6. Device mounted on FR-4 PCB with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 11 DMG1016UDW March 2018 Diodes Incorporated www.diodes.com Document number: DS31860 Rev. 8 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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