On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH40T120SMD


Transistor: IGBT; 1.2kV; 40A; 277W; TO247
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ON Semiconductor 3693
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between Tue. 21 May to Mon. 27 May
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USD 5.8972

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      277 W         
FGH75T65SQD_F155


IGBT Transistors 650V FS4 Trench IGBT
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ON Semiconductor 3637
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between Mon. 27 May to Wed. 29 May
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USD 3.4385

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Single650 V1.6 V+/- 20 V150 A+/- 400 nA  TO - 247 - 3BulkSiThrough Hole375 W- 55 C+ 175 CFgh75t65sqd
TIG065E8-TL-H


IGBT Transistors HIGH POWER SWITCHING
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ON Semiconductor 3626
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USD 0.3381

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Single Quad Collector Triple Emitter400 V4.2 V+/- 4 V150 A10 uA  ECH - 8Reel Smd/Smt - 40 C+ 150 CTig065e8
FGH50T65SQD-F155


IGBTs Trench Field Stop 650V 100A TO-247 RoHS
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ON Semiconductor 3136
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USD 2.9885

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TIG058E8-TL-H


ON Semiconductor IGBT Transistors LIGHT-CONTROLLING FLASH
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ON Semiconductor 2457
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USD 0.2831

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         ReelSi    Tig058e8
FGD3040G2_F085


IGBT Transistors EcoSPARK2 300mJ 400V N-Chan Ignition IGBT
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ON Semiconductor 2425
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between Tue. 21 May to Mon. 27 May
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USD 1.2246

Multiples of: 2500

 400 V1.15 V10 V23.2 A 150 W TO - 252ReelSiSmd/Smt150 W- 40 C+ 125 CFgd3040g2
FGD3440G2-F085


Trans IGBT Chip N-CH 390V 26.9A 166000mW Automotive 3-Pin(2+Tab) DPAK T/R
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ON Semiconductor 2425
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between Tue. 21 May to Mon. 27 May
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USD 1.6661

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Single        Tape And Reel      
HGTG5N120BND


IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
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ON Semiconductor 1959
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between Tue. 04 Jun to Fri. 07 Jun
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USD 2.3154

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Single1200 V2.45 V+/- 20 V21 A+/- 250 nA  TO - 247 - 3TubeSiThrough Hole167 W- 55 C+ 150 CHgtg5n120bnd
FGD2736G3-F085


IGBT Transistors ECOSPARK 2 IGNITION IGBT
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ON Semiconductor 1897
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between Mon. 27 May to Wed. 29 May
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USD 0.8748

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Single360 V1.45 V+/- 14 V21 A25 uA  TO - 252 - 3Cut Tape Smd/Smt150 W- 40 C+ 175 C 
HGTG11N120CND


IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dd
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ON Semiconductor 1767
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between Mon. 27 May to Wed. 29 May
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USD 3.059

Multiples of: 1

      298 W         
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