About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGB5H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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USD 0.5812
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Single600 V1.5 V+/- 20 V10 A+/- 250 nA  D2PAK - 3Cut TapeSiSmd/Smt88 W- 55 C+ 175 CStgb5h60df
STGB10H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 10 A high speed
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 0.5901
Multiples of: 1

Single600 V1.5 V+/- 20 V20 A250 nA  D2PAKReelSiSmd/Smt115 W- 55 C+ 175 C600 - 650V Igbts
STGD14NC60KT4


STMicroelectronics IGBT Transistors N-channel MOSFET
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STMicroelectronics Availability : 0
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USD 0.6035
Multiples of: 2500

Single600 V +/- 20 V    TO - 252 - 3ReelSiSmd/Smt - 55 C+ 150 CStgd14nc60k
STGP5H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 0.6112
Multiples of: 1

Single600 V1.5 V+/- 20 V10 A+/- 250 nA  TO - 220 - 3 SiThrough Hole88 W- 55 C+ 175 CStgp5h60df
STGP10NC60H


IGBT Transistors PowerMESH TM IGBT
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USD 0.6257
Multiples of: 1

Single600 V1.9 V+/- 20 V 100 nA60 W TO - 220 - 3Tube Through Hole - 55 C+ 150 CStgp10nc60h
STGF8NC60KD


Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220FP
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USD 0.6336
Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3 FP SiThrough Hole - 55 C+ 150 CStgf8nc60kd
STGP10NC60HD


IGBT Transistors PowerMESH TM IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 0.6769
Multiples of: 50

Single600 V1.9 V+/- 20 V 100 nA56 W DPAK - 3TubeSiSmd/Smt56 W- 55 C+ 150 CStgp10nc60hd
STGD25N40LZAG


IGBT Transistors Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
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USD 0.6774
Multiples of: 1

 400 V1.25 V16 V25 A625 uA Aec - Q101DPAK - 3  Smd/Smt150 W- 55 C+ 175 CStgd25n40lzag
STGD5NB120SZ-1


IGBT Transistors 5 A 1200V LOW DROP INTERN CLAMPED IGBT
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STMicroelectronics Availability : 0
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USD 0.6876
Multiples of: 1

      75 W         
STGD8NC60KDT4


STMicroelectronics IGBT Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET
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USD 0.7383
Multiples of: 1

Single600 V +/- 20 V    DPAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgd8nc60kd
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