About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW40H65DFB


IGBT Transistors 600V 40A trench gate field-stop IGBT
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USD 2.2178

Multiples of: 1

Single650 V1.8 V20 V80 A250 nA283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40h65dfb
STGP30H65F


IGBT Transistors Trench gte FieldStop IGBT 600V 30A
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STMicroelectronics Availability : 0
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USD 0.0747

Multiples of: 1

Single650 V2.4 V+/- 20 V60 A250 nA260 W TO - 220 - 3TubeSiThrough Hole260 W- 55 C+ 175 CStgp30h65f
STGP15M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V, 15 A low loss
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STMicroelectronics Availability : 0
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USD 0.2211

Multiples of: 1

Single650 V1.55 V+/- 20 V30 A+/- 250 uA  TO - 220 - 3 SiThrough Hole136 W- 55 C+ 175 CStgp15m65df2
STGB30H60DFB


IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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STMicroelectronics Availability : 0
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USD 0.2471

Multiples of: 4000

Single600 V1.55 V+/- 20 V60 A+/- 250 nA  D2PAK - 3ReelSiSmd/Smt260 W- 55 C+ 175 CStgb30h60dfb
STGF5H60DF


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics Availability : 0
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USD 0.283

Multiples of: 1

                
STGD3NB60SDT4


IGBT Transistors N-Ch 600 Volt 3 Amp
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STMicroelectronics Availability : 0
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USD 0.4573

Multiples of: 2500

Single600 V1.5 V+/- 20 V6 A+/- 100 nA48 WAec - Q101TO - 252 - 3ReelSiSmd/Smt48 W- 65 C+ 150 CStgd3nb60sd
STGD6NC60H-1


IGBT Transistors N-channel 600 V, 7 A very fast IGBT
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STMicroelectronics Availability : 0
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USD 0.5193

Multiples of: 1

Single600 V1.9 V+/- 20 V15 A100 nA  IPAK - 3TubeSiThrough Hole62.5 W- 55 C+ 150 C600 - 650V Igbts
STGPL6NC60D


STMicroelectronics IGBT Transistors 600V 6A N-Channel
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STMicroelectronics Availability : 0
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USD 0.5193

Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 C600 - 650V Igbts
STGF6M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
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STMicroelectronics Availability : 0
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USD 0.5424

Multiples of: 1

Single650 V1.55 V+/- 20 V12 A+/- 250 uA  TO - 220FP - 3  Through Hole24.2 W- 55 C+ 175 C 
STGPL6NC60DI


STMicroelectronics IGBT Transistors 600 V - 6 A Hyper fast IGBT
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STMicroelectronics Availability : 0
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USD 0.5704

Multiples of: 1

 600 V1.9 V20 V14 A100 nA56 W TO - 220TubeSiThrough Hole56 W  Stgpl6nc60di
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