About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGD10NC60KDT4


Transistor: IGBT; 600V; 10A; 62W; DPAK
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STMicroelectronics 2191
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USD 1.144
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      62 W         
STGB10NC60KT4


IGBT Transistors N-channel MOSFET
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STMicroelectronics 1881
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USD 1.097
Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3Reel Smd/Smt - 55 C+ 150 CStgb10nc60k
STGF10NC60SD


IGBT Transistors 10 A-600 V fast IGBT
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STMicroelectronics 1752
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USD 0.6669
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 600 V1.45 V20 V10 A100 nA25 W TO - 220 - 3 FPTube Through Hole   Stgf10nc60sd
STGP30NC60W


IGBT Transistors N-channel MOSFET
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STMicroelectronics 1750
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USD 1.9803
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Single600 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 CStgp30nc60w
STGW30H65FB


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics 1164
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USD 1.9196
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Single650 V1.75 V+/- 20 V30 A250 nA260 W TO - 247 - 3TubeSiThrough Hole260 W- 55 C+ 175 CStgw30h65fb
STGW40V60DF


STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT
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STMicroelectronics 141
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USD 3.783
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Single600 V2.35 V20 V80 A250 nA  TO - 247Tube Through Hole283 W- 55 C+ 175 C600 - 650V Igbts
STGB7NC60HDT4


IGBT Transistors N-Ch 600 Volt 14 Amp
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STMicroelectronics 0
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USD 1.4254
Multiples of: 1

Single600 V2.5 V+/- 20 V10 A+/- 100 nA25 W D2PAK - 3ReelSiSmd/Smt25 W- 55 C+ 150 CStgb7nc60hd
STGP3HF60HD


IGBT Transistors 4.5 A, 600 V very fast IGBT with Ultrafast diode
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STMicroelectronics 0
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USD 0.582
Multiples of: 1

          Si    Stgp3hf60hd
STGP3NC120HD


STMicroelectronics IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar
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STMicroelectronics 0
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USD 0.6108
Multiples of: 11

Single 2.2 V20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole75 W- 55 C+ 150 C900 - 1300V Igbts
STGB40H65FB


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed
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STMicroelectronics 0
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USD 2.8035
Multiples of: 1

Single650 V1.6 V20 V80 A+/- 250 nA  D2PAK - 3Cut TapeSiSmd/Smt283 W- 55 C+ 175 CStgb40h65fb
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