About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGB19NC60HDT4


STMicroelectronics IGBT Transistors N Ch 600V 19A
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STMicroelectronics 17460
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USD 1.4026
Multiples of: 1000

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb19nc60hd
STGB30M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics 16490
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USD 1.6011
Multiples of: 1000

         ReelSi    600 - 650V Igbts
STGP19NC60KD


IGBT Transistors 20 A - 600 V - short circuit rugged IGBT
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STMicroelectronics 10178
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USD 0.8267
Multiples of: 1

Single600 V +/- 20 V  125 W TO - 220 - 3TubeSiThrough Hole125 W- 55 C+ 150 CStgp19nc60kd
STGD6NC60HDT4


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics 9700
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USD 0.6217
Multiples of: 2500

Single600 V1.9 V+/- 20 V 100 nA50 W DPAK - 3ReelSiSmd/Smt50 W- 55 C+ 150 CStgd6nc60hd
STGW39NC60VD


Transistor: IGBT; 600V; 40A; 250W; TO247-3
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STMicroelectronics 8119
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USD 1.7697
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      250 W         
STGF10H60DF


IGBT Transistors Trench gate H series 600V 10A HiSpd
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STMicroelectronics 7760
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USD 0.9096
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Single600 V1.5 V+/- 20 V20 A250 nA30 W TO - 220 - 3 FPTubeSiThrough Hole30 W- 55 C+ 175 CStgf10h60df
STGWA25H120F2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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STMicroelectronics 5238
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USD 3.3932
Multiples of: 1

Single1200 V2.5 V20 V50 A250 nA    SiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGD3HF60HDT4


IGBT Transistors 4.5 A 600V IGBT 20V VGE 25A IFSM
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STMicroelectronics 4850
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USD 0.4588
Multiples of: 2500

 600 V2.95 V20 V7.5 A100 nA38 W DPAKReelSiSmd/Smt38 W- 55 C+ 150 CStgd3hf60hd
STGD6M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics 4850
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USD 0.6907
Multiples of: 1

Single650 V1.55 V20 V12 A+/- 250 uA  DPAK - 3Cut TapeSiSmd/Smt88 W- 55 C+ 175 CStgd6m65df2
STGD5H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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STMicroelectronics 0
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USD 0.6221
Multiples of: 1

Single600 V1.5 V+/- 20 V10 A+/- 250 nA  DPAK - 3ReelSiSmd/Smt83 W- 55 C+ 175 CStgd5h60df
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