About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWT30H65FB


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics 582
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USD 1.82
Multiples of: 30

Single650 V1.75 V+/- 20 V30 A250 nA260 W TO - 3PTubeSiThrough Hole260 W- 55 C+ 175 CStgwt30h65fb
STGW30H60DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics 582
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USD 1.9967
Multiples of: 1

Single600 V1.55 V20 V60 A250 nA  TO - 247 - 3TubeSiThrough Hole260 W- 55 C+ 175 C600 - 650V Igbts
STGW35NB60SD


Transistor: IGBT; 600V; 35A; 200W; TO247-3
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STMicroelectronics 582
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USD 3.6554
Multiples of: 30

      200 W         
STGWA40M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 582
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USD 3.6982
Multiples of: 1

Single1200 V1.85 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
STGWA100H65DFB2


IGBT Transistors Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT
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STMicroelectronics 582
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USD 4.5372
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STGB10NB37LZT4


STMicroelectronics IGBT Transistors 10 A - 410 V Int Clamped IGBT
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STMicroelectronics 505
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USD 2.171
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Single440 V 16 V   Aec - Q101D2PAK - 3ReelSiSmd/Smt - 65 C+ 150 CStgb10nb37lz
STGW20NC60VD


Transistor: IGBT; 600V; 30A; 200W; TO247-3
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STMicroelectronics 475
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USD 1.374
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      200 W         
STGW40M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 35
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USD 8.9367
Multiples of: 1

Single1200 V1.85 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
STGB10M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics 9
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USD 2.892
Multiples of: 1

         ReelSi    600 - 650V Igbts
STGW20H60DF


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics 0
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USD 1.1735
Multiples of: 30

Single600 V2 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
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