About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
HGTG5N120BND


IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
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ON Semiconductor 1959
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USD 2.3154
Multiples of: 1

Single1200 V2.45 V+/- 20 V21 A+/- 250 nA  TO - 247 - 3TubeSiThrough Hole167 W- 55 C+ 150 CHgtg5n120bnd
RGT40NS65DGTL


ROHM Semiconductor IGBT Transistors
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ROHM 1935
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USD 1.3957
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 650 V1.65 V+/- 30 V40 A+/- 200 nA  TO - 263 - 3ReelSiSmd/Smt161 W- 40 C+ 175 CRgt40ns65d
IKW50N60H3


IGBT Transistors HIGH SPEED SWITCHING
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Infineon 1918
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USD 2.6558
Multiples of: 1

Single600 V2.25 V20 V100 A100 nA  TO - 247 - 3TubeSiThrough Hole333 W- 40 C+ 175 CIkw50n60
IKD15N60RC2ATMA1


IGBT Trench Field Stop 600V 28A 115.4W Surface Mount PG-TO252-3
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Infineon 1910
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USD 0.6624
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Single600 V2.4 V20 V28 A   PG - TO252 - 3Reel , Cut Tape SMD/SMT115.4 W- 40 C+ 175 CTrenchstop RC
FGD2736G3-F085


IGBT Transistors ECOSPARK 2 IGNITION IGBT
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ON Semiconductor 1897
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USD 0.8748
Multiples of: 1

Single360 V1.45 V+/- 14 V21 A25 uA  TO - 252 - 3Cut Tape Smd/Smt150 W- 40 C+ 175 C 
IKFW75N65ES5XKSA1


IGBT Trench Field Stop 650V 80A 148W Through Hole PG-HSIP247-3-2
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Infineon 1892
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USD 6.003
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
STGB10NC60KT4


IGBT Transistors N-channel MOSFET
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STMicroelectronics 1881
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USD 1.097
Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3Reel Smd/Smt - 55 C+ 150 CStgb10nc60k
5302DG-AA3-R


SOT-223 IGBTs ROHS
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Unisonic 1876
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USD 0.0542
Multiples of: 5

                
STGB7NC60HDT4


IGBT Transistors N-Ch 600 Volt 14 Amp
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STMicroelectronics 0
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USD 1.4254
Multiples of: 1

Single600 V2.5 V+/- 20 V10 A+/- 100 nA25 W D2PAK - 3ReelSiSmd/Smt25 W- 55 C+ 150 CStgb7nc60hd
STGP3HF60HD


IGBT Transistors 4.5 A, 600 V very fast IGBT with Ultrafast diode
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STMicroelectronics 0
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USD 0.582
Multiples of: 1

          Si    Stgp3hf60hd
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