About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IHW20N120R5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop
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Infineon Availability : 903
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USD 1.408

Multiples of: 1

Single1200 V1.55 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole288 W- 40 C+ 175 CRc
RGT20TM65DGC9


IGBT Transistors 650V 10A IGBT Field Stop Trench
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ROHM Availability : 902
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USD 1.2929

Multiples of: 1

         Tube      
G40T120AK3S


278W 238ns 77ns +150℃@(Tj) 80A 1.2kV 6V@250uA 208nC@40A,15V 1.9V@10A,15V 1.5mJ 2.8mJ 1mA@1.2kV 6.618nF@25V 2.4V@20A 160A TO-247 IGBTs ROHS
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CRMICRO Availability : 899
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USD 2.369

Multiples of: 1

                
IGP10N60T


Transistor: IGBT; 600V; 18A; 110W; TO220-3
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Infineon Availability : 894
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USD 0.5533

Multiples of: 1

      110 W         
IKB30N65EH5ATMA1


IGBT Transistors Infineon s 650 V 30 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT i
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Infineon Availability : 894
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USD 1.529

Multiples of: 1

Single650 V1.65 V20 V55 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt188 W- 40 C+ 175 C650V Trenchstop 5
IKA06N60TXKSA1


Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
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Infineon Availability : 892
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USD 0.7801

Multiples of: 500

      28 W   Trenchstop     
STGB19NC60HDT4


STMicroelectronics IGBT Transistors N Ch 600V 19A
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STMicroelectronics Availability : 892
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USD 1.863

Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb19nc60hd
RGT50NS65DGC9


IGBT Trench Field Stop 650 V 48 A 194 W Through Hole TO-262
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ROHM Availability : 888
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USD 1.8837

Multiples of: 1

Single650 V1.65 V30 V48 A200 nA  TO - 262 - 3TubeSiThrough Hole194 W- 40 C+ 175 C 
STGP30NC60W


IGBT Transistors N-channel MOSFET
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STMicroelectronics Availability : 881
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USD 1.7511

Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 CStgp30nc60w
IKW50N65RH5XKSA1


IGBT Trench Field Stop 650V 80A 305W Through Hole PG-TO247-3
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Infineon Availability : 874
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USD 3.7339

Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
FGY40T120SMD


IGBT Transistors 1200V 40A FS2 Trench IGBT
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ON Semiconductor Availability : 873
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USD 8.8594

Multiples of: 1

Single1.2 kV2 V+/- 30 V80 A+/- 400 nA  TO - 247 - 3BulkSiThrough Hole882 W- 55 C+ 175 CFgy40t120smd
IGU04N60TAKMA1


IGBT Transistors Infineons TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod
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Infineon Availability : 871
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USD 0.728

Multiples of: 1

        TO - 251 - 3TubeSi    Trenchstop Igbt
STGB6NC60HDT4


IGBT Transistors PowerMESH TM IGBT
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STMicroelectronics Availability : 871
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USD 1.0263

Multiples of: 1

Single600 V2.7 V+/- 20 V 100 nA80 W D2PAK - 3ReelSiSmd/Smt80 W- 55 C+ 150 CStgb6nc60hd
AOTF10B60D


Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eon:0.35mJ; Eoff:0.16mJ
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Alpha & Omega Availability : 867
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USD 1.428

Multiples of: 1

  1.53 V   16.7 W         
STGB40H65FB


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed
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STMicroelectronics Availability : 867
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USD 3.4746

Multiples of: 1

Single650 V1.6 V20 V80 A+/- 250 nA  D2PAK - 3Cut TapeSiSmd/Smt283 W- 55 C+ 175 CStgb40h65fb
STGP10NC60S


Trans IGBT Chip N-CH 600V 21A 3-Pin(3+Tab) TO-220 Tube
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STMicroelectronics Availability : 864
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USD 1.3814

Multiples of: 1

Single        Rail/Tube      
RGT30NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM Availability : 861
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USD 1.536

Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 262 - 3TubeSiThrough Hole133 W- 40 C+ 175 C 
IRGR2B60KDPBF


IGBT Transistors 600V IGBT Ultrafast 3.7A 1.95V
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Infineon Availability : 859
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USD 0.8368

Multiples of: 1

Single600 V1.95 V+/- 20 V6.3 A100 nA  TO - 252 - 3TubeSiSmd/Smt35 W- 55 C+ 150 CRc
RGT16NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM Availability : 857
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USD 1.2038

Multiples of: 1

Single650 V1.65 V30 V16 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt94 W- 40 C+ 175 C 
AUIRGPS4070D0


IGBT Transistors DISCRETES
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Infineon Availability : 854
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USD 14.8594

Multiples of: 29

Single600 V1.7 V20 V240 A100 nA Aec - Q101SUPER - 247 - 3TubeSiThrough Hole750 W- 55 C+ 175 C 
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