About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGD3440G2_F085


IGBT Transistors EcoSPARK2 335mJ 400V N-Chan Ignition IGBT
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ON Semiconductor 26535
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USD 1.2305
Multiples of: 1

 400 V1.1 V14 V26.9 A 166 W TO - 252ReelSiSmd/Smt166 W- 40 C+ 125 CFgd3440g2
IKD06N65ET6ARMA1


IGBT Trench Field Stop 650V 9A 31W Surface Mount PG-TO252-3
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Infineon 5384
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USD 0.9303
Multiples of: 1

        TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®     Trenchstop
STGD10NC60KT4


IGBT Transistors IGBT
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STMicroelectronics 2404
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USD 1.2585
Multiples of: 1

Single600 V +/- 20 V    DPAK - 3Cut TapeSiSmd/Smt - 55 C+ 150 CStgd10nc60kd
IMBG120R350M1HXTMA1


N-Channel 1.2kV 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12
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Infineon 2349
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USD 3.726
Multiples of: 1

        TO - 263 - 8 , D²PAK (7 Leads + Tab) , TO - 263CATape And ReelSic (Silicon Carbide Junction Transistor)    Coolsic
STGD18N40LZT4


IGBT Transistors EAS 180 mJ-400 V clamped IGBT
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STMicroelectronics 2337
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USD 1.1064
Multiples of: 1

Single360 V 12 V   Aec - Q101DPAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgd18n40lz
IKW30N65NL5XKSA1


IGBT Transistors 650V IGBT Trenchstop 5
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Infineon 2322
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USD 3.0718
Multiples of: 142

Single650 V1.05 V20 V85 A100 nA  TO - 247 - 3TubeSiThrough Hole227 W- 40 C+ 175 CTrenchstop 5 L5
STGP6NC60HD


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics 2322
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USD 0.6108
Multiples of: 1

Single600 V1.9 V20 V15 A100 nA56 W TO - 220 - 3TubeSiThrough Hole56 W- 55 C+ 150 CStgp6nc60hd
IKD10N60RATMA1


Infineon Technologies IGBT Transistors IGBT w INTG DIODE 600V 20A
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Infineon 2305
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USD 0.6037
Multiples of: 1

Single600 V1.65 V+/- 20 V20 A100 nA  TO - 252 - 3ReelSiSmd/Smt150 W- 40 C+ 175 CIkd10n60
STGW30V60DF


IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics 2298
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USD 2.2247
Multiples of: 1

Single600 V2.35 V20 V60 A250 nA  TO - 247TubeSiThrough Hole258 W- 55 C+ 175 CStgw30v60df
IGB50N65S5ATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 0
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USD 2.2365
Multiples of: 1

Single650 V1.35 V20 V80 A50 uA  TO - 263 - 3Cut Tape Smd/Smt270 W- 40 C+ 175 CTrenchstopâ ¢5
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