About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGL60N100BNTDTU


IGBT Transistors HIGH_POWER
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 972
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USD 10.0499

Multiples of: 1

Single1000 V1.5 V+/- 25 V60 A+/- 500 nA180 W TO - 264 - 3TubeSiThrough Hole180 W- 55 C+ 150 CFgl60n100bntdtu
DGTD65T15H2TF


IGBT Transistors IGBT 600V-X
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Diodes Incorporated Availability : 971
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USD 0.9669

Multiples of: 1

Single650 V1.65 V 30 A+/- 100 nA  I TO - 220AB - 3  Through Hole48 W- 40 C+ 175 C 
IGP10N60TXKSA1


IGBT Transistors LOW LOSS IGBT TECH 600V 10A
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Infineon Availability : 970
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USD 0.4719

Multiples of: 1

Single600 V1.5 V+/- 20 V24 A100 nA  TO - 220 - 3TubeSiThrough Hole110 W- 40 C+ 175 CTrenchstop Igbt
IGB20N60H3


Transistor: IGBT; 600V; 20A; 170W; D2PAK
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Infineon Availability : 970
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USD 0.6644

Multiples of: 1

      170 W         
STGP7NC60HD


Transistor: IGBT; 600V; 14A; 80W; TO220AB
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STMicroelectronics Availability : 970
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USD 0.7885

Multiples of: 1000

      80 W         
STGF15H60DF


IGBT Transistors Trench gate H series 600V 15A HiSpd
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STMicroelectronics Availability : 970
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USD 0.735

Multiples of: 1000

Single600 V1.6 V+/- 20 V30 A250 nA30 W TO - 220 - 3 FPTubeSiThrough Hole30 W- 55 C+ 175 CStgf15h60df
STGF20M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
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STMicroelectronics Availability : 970
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USD 1.002

Multiples of: 1000

Single650 V1.55 V+/- 20 V40 A250 uA  TO - 220FP - 3 SiThrough Hole32.6 W- 55 C+ 175 CStgf20m65df2
AOT20B65M1


Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ
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Alpha & Omega Availability : 970
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USD 1.26

Multiples of: 1

  1.7 V   114 W         
CRG60T60AK3HD


TO-247 IGBTs ROHS
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CRMICRO Availability : 970
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USD 1.2655

Multiples of: 1

                
STGB10NC60HDT4


IGBT Transistors N Ch 10A 600V
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STMicroelectronics Availability : 970
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USD 1.568

Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60hd
STGB10NB37LZT4


STMicroelectronics IGBT Transistors 10 A - 410 V Int Clamped IGBT
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STMicroelectronics Availability : 970
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USD 1.5905

Multiples of: 1

Single440 V 16 V   Aec - Q101D2PAK - 3ReelSiSmd/Smt - 65 C+ 150 CStgb10nb37lz
STGB3NC120HDT4


IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast
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STMicroelectronics Availability : 970
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USD 1.6509

Multiples of: 1

 1200 V2.3 V20 V14 A100 nA75 W D2PAKReelSiSmd/Smt75 W  Stgb3nc120hd
AIKB15N65DF5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon Availability : 970
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USD 1.955

Multiples of: 1

         Cut Tape      
AIKB15N65DH5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon Availability : 970
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USD 1.955

Multiples of: 1

         Cut Tape      
RGT40NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM Availability : 970
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USD 2.1749

Multiples of: 1

Single650 V1.65 V30 V40 A200 nA  TO - 262 - 3TubeSiThrough Hole161 W- 40 C+ 175 C 
IKW75N65ES5XKSA1


IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
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Infineon Availability : 969
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USD 2.9775

Multiples of: 240

Single650 V1.42 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 S5
IGB50N65H5ATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 965
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USD 1.863

Multiples of: 1

Single650 V1.65 V20 V80 A100 nA  TO - 263 - 3Cut Tape Smd/Smt270 W- 40 C+ 175 CTrenchstopâ ¢5
RGT30NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM Availability : 962
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USD 1.3932

Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt133 W- 40 C+ 175 C 
STGB10NC60KDT4


IGBT Transistors N-channel MOSFET
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STMicroelectronics Availability : 954
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USD 0.6619

Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60kd
IKW75N65EH5XKSA1


IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 452
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USD 2.651

Multiples of: 1

Single650 V1.65 V20 V90 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 H5
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