About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKD15N60RFATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 2243
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USD 0.9863
Multiples of: 1

Single600 V2.2 V+/- 20 V30 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt250 W- 40 C+ 175 CRc
NCE07TD60BK


IGBTs TO-252 RoHS
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NCE Power 2236
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USD 0.3623
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STGD4M65DF2


IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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STMicroelectronics 2229
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USD 0.6058
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Single650 V1.6 V+/- 20 V8 A+/- 250 uA  DPAK - 3Cut TapeSiSmd/Smt68 W- 55 C+ 175 CStgd4m65df2
STGD10NC60KDT4


Transistor: IGBT; 600V; 10A; 62W; DPAK
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STMicroelectronics 2196
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USD 1.144
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      62 W         
AOD5B65MQ1E


52W 10A 650V TO-252(DPAK) IGBTs ROHS
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Alpha & Omega 2103
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USD 0.3311
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IKW40N120H3


IGBT Transistors IGBT PRODUCTS
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Infineon 2077
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USD 3.7487
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Single1200 V2.05 V+/- 20 V80 A600 nA483 W TO - 247 - 3TubeSiThrough Hole483 W- 40 C+ 175 CIkw40n120
IKD06N60RFATMA1


IGBT Transistors IGBT PRODUCTS
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Infineon 2052
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USD 0.5313
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Single600 V2.2 V+/- 20 V12 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt100 W- 40 C+ 175 CRc
IKW40N120T2


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A
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Infineon 2006
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USD 3.6106
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Single1200 V2.3 V+/- 20 V75 A200 nA  TO - 247 - 3TubeSiThrough Hole480 W- 40 C+ 150 CIkw40n120
IDW40E65D2


Infineon Technologies IGBT Transistors IGBT PRODUCTS Rapid Switching
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Infineon 1994
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USD 1.403
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         TubeSi    Idw40e65
FGH60N60SMD


igbts field stop 600v 120a to-247 (ac) rohs
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ON Semiconductor 1619
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USD 3.7573
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