About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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STGB19NC60KDT4


STMicroelectronics IGBT Transistors 20 A - 600 V - short circuit rugged IGBT
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STMicroelectronics Availability : 79
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USD 0.6911

Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb19nc60kd
IXGH40N120A2


IGBT Transistors SGL IGBT 1200V, 80A
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IXYS Availability : 79
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USD 11.825

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Single1.2 kV2 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole360 W- 55 C+ 150 CIxgh40n120
GT40WR21,Q(O


Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
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Toshiba Availability : 79
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USD 11.844

Multiples of: 1

      375 W         
APT54GA60B


IGBT Transistors FG, IGBT, 600V, TO-247
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Microchip Availability : 78
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USD 7.5116

Multiples of: 1

      416 W   POWER MOS 8®, PT     
IXBK55N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 78
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USD 95.722

Multiples of: 1

Single3 kV2.7 V25 V130 A+/- 200 nA  TO - 264 - 3TubeSiThrough Hole625 W- 55 C+ 150 CVery High Voltage
APT75GN60BG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip Availability : 77
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USD 6.71

Multiples of: 1

         TubeSi     
IXBT12N300HV


IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 77
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USD 27.797

Multiples of: 1

         Tube      
NGTB30N120FL2WG


IGBT Transistors 1200V/30A FAST IGBT FSII
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ON Semiconductor Availability : 76
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USD 4.7594

Multiples of: 1

Single1200 V2 V30 V60 A200 nA452 W TO - 247TubeSiThrough Hole452 W- 55 C+ 175 CNgtb30n120fl2
FGH60N60SFTU


IGBT Transistors N-CH / 600V 60A/ FS
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ON Semiconductor Availability : 75
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USD 3.85

Multiples of: 1

Single600 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh60n60
IXYH55N120A4


IGBT Transistors IGBT XPT GEN 4 1200V TO247
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IXYS Availability : 75
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USD 8.019

Multiples of: 1

         Tube      
IXYP20N120C3


IGBT Transistors GenX3 1200V XPT IGBT
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IXYS Availability : 74
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USD 3.179

Multiples of: 1

Single1200 V4 V30 V40 A100 nA  TO - 220 - 3TubeSiThrough Hole278 W- 55 C+ 175 CIxyp20n120
HGTG30N60C3D


IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para
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ON Semiconductor Availability : 74
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USD 6.1139

Multiples of: 1

                
STGFW40V60F


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
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STMicroelectronics Availability : 73
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USD 2.024

Multiples of: 1

Single600 V1.8 V+/- 20 V80 A250 nA  TO - 3PFTubeSiThrough Hole62.5 W- 55 C+ 175 C600 - 650V Igbts
AIKW20N60CTXKSA1


IGBT Transistors DISCRETES
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Infineon Availability : 73
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USD 4.3009

Multiples of: 1

         TubeSi    600V Trenchstop
IXYH40N120C3


IGBT Transistors GenX3 1200V XPT IGBT
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IXYS Availability : 73
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USD 6.479

Multiples of: 1

Single1200 V3.6 V30 V70 A100 nA  TO - 247AD - 3TubeSiThrough Hole577 W- 55 C+ 175 CIxyh40n120
SGT25U120FD1P7


TO-247-3 IGBTs ROHS
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Silan Availability : 72
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USD 1.1702

Multiples of: 1

                
MSG70T170HLB3


TO-264 IGBT Transistors / Modules ROHS
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MASPOWER Availability : 72
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USD 56.5702

Multiples of: 1

                
IKA15N65ET6


IGBT Transistors HOME APPLIANCES 14
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Infineon Availability : 69
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USD 0.9952

Multiples of: 1

                
APT50GN60BDQ3G


IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
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Microchip Availability : 68
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USD 9.845

Multiples of: 1

      366 W   Field Stop     
RGC80TSX8RGC11


IGBT Transistors REVERSE CONDUCTING IGBT
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ROHM Availability : 55
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USD 5.2207

Multiples of: 1

Single1.8 kV2.2 V30 V80 A200 nA  TO - 247 - 3TubeSiThrough Hole535 W- 40 C+ 175 C 
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