About MOSFET

On Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138LT1G


MOSFET 50V 200mA N-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 251133
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USD 0.0475
Multiples of: 5

200 mA50 V3.5 OhmsN - Channel 850 mV- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V Enhancement  
FDN5630


Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 238620
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USD 0.1142
Multiples of: 3000

            Powertrench®      
NTH4L070N120M3S


MOSFET SIC MOS TO247-4L 70MOHM 1
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ON Semiconductor 212212
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USD 14.5991
Multiples of: 1

                   
FDMS7694


MOSFET 30V NCh PowerTrench MOSFET
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ON Semiconductor 205382
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USD 0.3174
Multiples of: 1

13.2 A30 V11.1 mOhmsN - Channel 1 V- 55 C+ 150 C27 WSmd/SmtPOWER - 56ReelSi1 Channel20 V15 nCEnhancement Powertrench
NTZD3155CT1G


MOSFET 20V 540mA/-430mA Complementary w/ESD
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ON Semiconductor 201760
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USD 0.0985
Multiples of: 4000

540 mA20 V550 mOhms , 900 mOhmsN - Channel, P - Channel  - 55 C+ 150 C250 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel6 V Enhancement  
BVSS123LT1G


MOSFET NFET 100V 170MA 6OH
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ON Semiconductor 189150
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USD 0.0797
Multiples of: 3000

170 mA100 V6 OhmsN - Channel 1.6 V- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V EnhancementAec - Q101 
FDC608PZ


Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
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ON Semiconductor 185337
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USD 0.1955
Multiples of: 1

   P Channel               
NTA7002NT1G


mosfet n trench 30v 154ma (tj) 1.5v @ 100ua 7 @ 154ma,4.5v sc-75 rohs
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ON Semiconductor 174600
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USD 0.0224
Multiples of: 3000

   N Channel               
FDW262P


20V/8V, 45/63/100MO, PCH, TSSOP8, SINGLE
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ON Semiconductor 172980
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USD 0.7026
Multiples of: 629

                   
NDT456P


MOSFET SOT-223 P-CH ENHANCE
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ON Semiconductor 11632
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USD 0.9568
Multiples of: 1

   P - Channel  - 65 C+ 150 C Smd/SmtSOT - 223Reel       
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