About MOSFET

On Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002ET7G


MOSFET NFET SOT23 60V 115MA 7MO
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ON Semiconductor 448769
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USD 0.0219
Multiples of: 1

310 mA60 V2.5 OhmsN - Channel 1 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.81 nCEnhancement  
NTB004N10G


MOSFET MV5 SOAFET 4.2MOHM 100V N-FET, D2PAK
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ON Semiconductor 436112
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USD 2.5042
Multiples of: 800

201 A100 V4.2 mOhmsN - Channel 4 V + 175 C340 WSMD/SMTTO - 263 - 3Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V175 nCEnhancement  
NVTR01P02LT1G


ON Semiconductor MOSFET PFET 20V 0.160R TR
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ON Semiconductor 369570
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USD 0.0876
Multiples of: 1

- 1.3 A- 20 V220 mOhmsP - Channel     Smd/SmtSOT - 23 - 3ReelSi    Aec - Q101 
FDD8874


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 361313
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USD 0.5936
Multiples of: 1

116 A30 V5.1 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
FDV301N


Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
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ON Semiconductor 346290
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USD 0.0372
Multiples of: 3000

                   
FDN340P


MOSFET SSOT-3 P-CH -20V
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ON Semiconductor 334650
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USD 0.1164
Multiples of: 3000

- 2 A- 20 V60 mOhmsP - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtSSOT - 3Cut TapeSi1 Channel8 V Enhancement Powertrench
NDC7001C


Transistor: N/P-MOSFET; unipolar; 60/-60V; 0.51/0.34A; 0.96W
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ON Semiconductor 334650
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USD 0.1599
Multiples of: 3000

                   
FDC6321C


Transistor: N/P-MOSFET; unipolar; 25/-25V; 0.68/0.46A; 0.9W
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ON Semiconductor 311370
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USD 0.2196
Multiples of: 3000

                   
FDMS86300


MOSFET 80V N-Channel PowerTrench MOSFET
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ON Semiconductor 253170
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USD 0.8245
Multiples of: 3000

42 A80 V5.5 mOhmsN - Channel 3.4 V- 55 C+ 150 C104 WSmd/SmtPOWER 56ReelSi1 Channel20 V59 nCEnhancement Powertrench
NTHL040N120M3S


MOSFET SIC MOS TO247-3L 40MOHM 1200V M3
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ON Semiconductor 242500
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USD 12.2729
Multiples of: 1

                   
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