About MOSFET

On Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDC5614P


Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 165870
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USD 0.2315
Multiples of: 3000

            Powertrench®      
NVS4409NT1G


ON Semiconductor MOSFET
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ON Semiconductor 157140
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USD 0.0649
Multiples of: 3000

700 mA25 V350 mOhmsN - Channel 650 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 323 - 3Tape And ReelSi1 Channel4.5 V1.2 nCEnhancementAec - Q101 
BSS84


Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.36W; SOT23
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ON Semiconductor 151320
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USD 0.0474
Multiples of: 3000

   P Channel               
FDMS8674


30V, 21A, 5.0m ohm,NCH, POWER TRENCH MOSFET
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ON Semiconductor 143443
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USD 0.7026
Multiples of: 629

                   
NTS4409NT1G


MOSFET NFET 25V/8V 75mA 350
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ON Semiconductor 142590
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USD 0.1035
Multiples of: 3000

750 mA25 V350 mOhmsN - Channel 650 mV- 55 C+ 150 C330 mW (1/3 w)Smd/SmtSC - 70 - 3Cut TapeSi1 Channel4.5 V1.2 nCEnhancement  
BSS123LT1G


MOSFET 100V 170mA N-Channel
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ON Semiconductor 121681
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USD 0.0451
Multiples of: 5

170 mA100 V6 OhmsN - Channel 1.6 V- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
FDN342P


Transistor: P-MOSFET; unipolar; -20V; -2A; 0.5W; SuperSOT-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 113490
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USD 0.1142
Multiples of: 3000

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FDMS7682


MOSFET 30V/20V N-Channel PowerTrench MOSFET
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ON Semiconductor 113490
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USD 0.2344
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWER 56Reel       
CPH6341-TL-W


ON Semiconductor MOSFET
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ON Semiconductor 107670
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USD 0.2544
Multiples of: 3000

- 5 A- 30 V59 mOhmsP - channel   + 150 C1.6 WSmd/SmtSOT - 26 - 6ReelSi1_Channel4 V10 nCEnhancement  
NTH4L022N120M3S


MOSFET SIC MOS TO247-4L 22MOHM 1200V
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ON Semiconductor 105083
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USD 25.3091
Multiples of: 1

68 A1.2 kV30 mOhmsN - Channel 4.4 V- 55 C+ 175 C352 WThrough HoleTO - 247 - 4TubeSi1 Channel- 10 V , + 22 V151 nCEnhancement  
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