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A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications I max D Low R , thermally efficient package JA Device V R max (BR)DSS DS(on) T = 25C 2 A 6mm footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switching speed 120m V = 10V 3.7A GS Q1 30V Lead-Free, RoHS Compliant (Note 1) 180m V = 4.5V 3.0A GS Halogen and Antimony Free.Gree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability 210m V = -10V -2.7A GS Q2 -30V 330m V = -4.5V -2.2A GS Mechanical Data Case: DFN3020B-8 Description and Applications Terminals: Pre-Plated NiPdAu leadframe Nominal package height: 0.8mm This MOSFET has been designed to minimize the on-state resistance UL Flammability Rating 94V-0 (R ) and yet maintain superior switching performance, making it DS(on) Moisture Sensitivity: Level 1 per J-STD-020 ideal for high efficiency power management applications. Solderable per MIL-STD-202, Method 208 MOSFET gate drive Weight: 0.013 grams (approximate) LCD backlight inverters Motor control Portable applications DFN3020B-8 D1 D2 D2 D2 D1 D1 G1 G2 D2 D1 S1 S2 G2 S2 G1 S1 Q1 N-Channel Q2 P-Channel Pin 1 Top View Bottom View Bottom View Equivalent Circuit Pin-Out Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMC3AMCTA C01 7 8 3000 Notes: 1. No purposefully added lead 2. Diodes Inc sGree policy can be found on our website at A Product Line of Diodes Incorporated ZXMC3AMC Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol N-channel Q1 P-channel Q2 Unit -30 Drain-Source Voltage V 30 DSS V Gate-Source Voltage 20 20 V GSS (Notes 4 & 7) 3.7 -2.7 Continuous Drain Current V = 10V T = 70C (Notes 4 & 7) I 3.0 -2.2 GS A D A (Notes 3 & 7) 2.9 -2.1 Pulsed Drain Current (Notes 6 & 7) 13 -9.2 V = 10V I GS DM Continuous Source Current (Body diode) (Notes 4 & 7) 3.2 -2.8 I S Pulse Source Current (Body diode) (Notes 6 & 7) 13 -9.2 I SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol N-channel Q1 P-channel Q2 Unit 1.50 (Notes 3 & 7) 12 2.45 (Notes 4 & 7) Power Dissipation 19.6 W P D Linear Derating Factor 1.13 mW/C (Notes 5 & 7) 9 1.70 (Notes 5 & 8) 13.6 (Notes 3 & 7) 83.3 (Notes 4 & 7) 51.0 Thermal Resistance, Junction to Ambient R JA (Notes 5 & 7) 111 C/W (Notes 5 & 8) 73.5 Thermal Resistance, Junction to Lead (Notes 7 & 9) R 17.1 JL Operating and Storage Temperature Range T , T -55 to +150 C J STG 2 Notes: 3. For a device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half. 4. Same as note (3) except the device is measured at t < 5 sec. 2 5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper. 6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 11 December 2010 ZXMC3AMC Diodes Incorporated www.diodes.com Document number: DS35088 Rev. 1 - 2
