About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFL014NTRPBF


MOSFET N Trench 55V 1.9A 4V @ 250uA 160 mΩ @ 1.9A,10V SOT-223 RoHS
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Infineon Availability : 55775
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USD 0.1838

Multiples of: 2500

   N Channel      SOT - 223Reel       
DMN1008UFDF-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated Availability : 47029
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USD 0.1247

Multiples of: 1

12.2 A12 V6.6 mOhmsN - Channel 300 mV- 55 C+ 150 C1.7 WSmd/SmtU - DFN2020 - 6 Si1 Channel4.5 V13.6 nCEnhancement  
PJE8406_R1_00001


MOSFET /E06/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-20TBMN/NF20TB-QI02/PJ///
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Panjit Availability : 47025
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USD 0.097

Multiples of: 1

           Cut Tape       
AO3402


30V 4A 1.2W 55mΩ@10V,4A 1.4V@250uA 41pF@15V N Channel 390pF@15V 4.34nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK Availability : 46870
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USD 0.013

Multiples of: 20

                   
DMT3020LSDQ-13


MOSFET MOSFET BVDSS: 8V 24V SO-8 T&R 2.5K
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Diodes Incorporated Availability : 46717
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USD 0.2068

Multiples of: 1

                   
FDN5630


Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
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ON Semiconductor Availability : 46560
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USD 0.1048

Multiples of: 3000

            Powertrench®      
NDS352AP


Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
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ON Semiconductor Availability : 46560
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USD 0.0946

Multiples of: 3000

                   
IRLM120ATF


Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R
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ON Semiconductor Availability : 46560
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USD 0.3558

Multiples of: 1

2.3 A100 V220 mOhmsn - channel  - 55 C+ 150 C2.7 Wsmd/smtSOT - 223 - 3Reel 1 channel20 V enhancement  
SUD09P10-195-GE3


Vishay Semiconductors MOSFET -100V 195mOhms 10V -8.8A
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Vishay Availability : 46560
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USD 0.375

Multiples of: 2000

8.8 A100 V195 mOhmsP - Channel 1 V- 55 C+ 150 C32.1 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 10 V23.2 nCEnhancement Trenchfet
SPD08P06P G


TO-252-3 MOSFETs ROHS
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Infineon Availability : 46343
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USD 0.2992

Multiples of: 1

8.83 A60 V230 mOhmsP - Channel 4 V- 55 C+ 175 C42 WSmd/SmtTO - 252ReelSi1 Channel20 V- 13 nCEnhancementAec - Q101Sipmos
FDMS3600S


MOSFET 25V Dual N-Channel PowerTrench MOSFET
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ON Semiconductor Availability : 46307
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USD 1.3439

Multiples of: 1

15 A , 30 A25 V5.6 mOhms , 1.6 mOhmsn - channel 1.8 v , 1.5 V- 55 C+ 150 C2.2 w , 2.5 Wsmd/smtPOWER 56Reelsi2 channel20 V19 nC  power stage
BSL316C H6327


Infineon Technologies MOSFET SMALL SIGNALP-CH
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Infineon Availability : 46221
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USD 0.1375

Multiples of: 1

1.4 A , 1.5 A30 V119 mOhms , 113 mOhmsP - Channel 1.2 v , 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtTSOP - 6ReelSi1 Channel20 V600 pC , - 2.4 nCEnhancement  
2N7002K


MOSFET N Trench 60V 300mA 2.5V @ 250uA 5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Hottech Availability : 46172
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USD 0.0074

Multiples of: 50

                   
STD86N3LH5


STMicroelectronics MOSFET N-channel 30 V
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STMicroelectronics Availability : 46075
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USD 0.5999

Multiples of: 2500

80 A30 V5 mOhmsN - Channel22 V - 55 C+ 175 C70 WSmd/SmtDPAK - 3ReelSi1 Channel22 V EnhancementAec - Q101 
SI2309S


SOT-23 MOSFETs ROHS
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Bourne Availability : 45900
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USD 0.0385

Multiples of: 10

                   
8205A


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC Availability : 45747
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USD 0.027

Multiples of: 10

                   
SI2302


MOSFET N Trench 20V 2.1A 1.2V @ 50uA 72 mΩ @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
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Hottech Availability : 45590
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USD 0.0154

Multiples of: 20

                   
FQP7P06


Transistor: P-MOSFET; unipolar; -60V; -4.95A; 45W; TO220AB
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ON Semiconductor Availability : 44917
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USD 0.746

Multiples of: 1

            Qfet®      
DMN63D8LDWQ-7


MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA
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Diodes Incorporated Availability : 11640
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USD 0.0404

Multiples of: 3000

220 mA30 V2.8 Ohms , 2.8 OhmsN - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V870 pC , 870 pCEnhancementAec - Q101 
IRFHM9331TRPBF


MOSFET P Trench 30V 11A 2.4V @ 25uA 10 mΩ @ 11A,20V PQFN 3x3 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 7760
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USD 0.2063

Multiples of: 4000

11 A30 V11.7 mOhmsP - Channel 1.8 V- 55 C+ 150 C2.8 WSmd/SmtPQFN - 8ReelSi1 Channel25 V16 nCEnhancement  
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