NOT RECOMMENDED FOR NEW DESIGN USE DMC3071LVT DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D Device V R (BR)DSS DS(on) Low Input Capacitance T = +25C A Fast Switching Speed 60m V = 10V 3.4A GS Low Input/Output Leakage Q1 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100m V = 4.5V 2.7A GS Halogen and Antimony Free. Green Device (Note 3) 95m V = -10V -2.8A GS Qualified to AEC-Q101 Standards for High Reliability Q2 -30V 140m V = -4.5V -2.3A GS Description and Applications Mechanical Data Case: TSOT26 This new generation MOSFET is designed to minimize the on-state resistance (R ) yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound. DS(on) UL Flammability Classification Rating 94V-0 making it ideal for high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Backlighting Terminals: FinishMatte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.013 grams (Approximate) D1 D2 TSOT26 G1 1 6 D1 G1 G2 S2 2 5 S1 G2 3 4 D2 S1 S2 Q2 P-Channel Top View Top View Q1 N-Channel Ordering Information (Note 3) Part Number Case Packaging DMG6602SVT-7 TSOT26 3000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMG6602SVT Maximum Ratings Q1 ( TA = +25C unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 3.4 A Continuous Drain Current (Note 6) V = 10V Steady State I A GS D 2.7 T = +70C A T = +25C 2.7 A Steady State A Continuous Drain Current (Note 6) V = 4.5V I GS D 2.2 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) IS 1.5 A Pulsed Drain Current (Note 6) 25 A I DM Maximum Ratings Q2 ( TA = +25C unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage 20 V VGSS T = +25C -2.8 A Steady State A Continuous Drain Current (Note 6) V = -10V I GS D -2.4 T = +70C A T = +25C -2.3 A Continuous Drain Current (Note 6) V = -4.5V Steady State I A GS D -2.1 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) IS -1.5 A Pulsed Drain Current (Note 6) I -20 A D Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.84 A Total Power Dissipation (Note 5) W PD T = +70C 0.52 A Steady State 155 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t < 10s 109 T = +25C 1.27 A Total Power Dissipation (Note 6) W P D T = +70C 0.8 A Steady State 102 Thermal Resistance, Junction to Ambient (Note 6) R JA t < 10s 71 C/W Thermal Resistance, Junction to Case (Note 6) R 34 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate. 2 of 10 December 2018 DMG6602SVT Diodes Incorporated www.diodes.com Document number: DS35159 Rev. 8 - 3