About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML9301TR(UMW)


SOT-23 MOSFETs ROHS
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Youtai Availability : 18095
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USD 0.0331

Multiples of: 10

                   
IPC100N04S52R8ATMA1


MOSFET MOSFET_20V40V
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Infineon Availability : 18070
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USD 0.4532

Multiples of: 1

100 A40 V2.3 mOhmsN - Channel 2.2 V- 55 C+ 175 C75 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V45 nCEnhancementAec - Q101Optimos
STW11NK100Z


Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247
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STMicroelectronics Availability : 18066
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USD 1.6276

Multiples of: 1

            Mdmesh      
IPA093N06N3GXKSA1


Transistor: N-MOSFET; unipolar; 60V; 43A; 33W; TO220FP
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Infineon Availability : 18065
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USD 0.6781

Multiples of: 1

            Optimos 3      
WST03P06


MOSFET P Trench 60V 3.5A (Tc) 3V @ 250uA 110 mΩ @ 2A,10V SOT-23-3L RoHS
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Winsok Availability : 18051
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USD 0.0714

Multiples of: 5

                   
ZXMN3B14FTA


N-Channel 30 V 2.9A (Ta) 1W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated Availability : 17995
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USD 0.2233

Multiples of: 1

3.5 A30 V140 mOhmsN - channel  - 55 C150 C1 WSmdsmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
IPG20N04S4L-11


Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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Infineon Availability : 17995
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USD 0.4301

Multiples of: 1

20 A40 V11.6 mOhmsN - Channel   + 175 C41 WSmd/SmtTDSON - 8ReelSi2 Channel16 V  Aec - Q101Optimos
FDD13AN06A0_F085


Fairchild Semiconductor MOSFET Trans N-Ch 60V 50 A 3-Pin 2Tab
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ON Semiconductor Availability : 17955
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USD 0.6677

Multiples of: 1

50 A60 V13.5 mOhmsN - Channel20 V - 55 C+ 175 C115 WSmd/SmtDPAK - 2ReelSi1 Channel20 V Enhancement  
2N7002W


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper Availability : 17945
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USD 0.0117

Multiples of: 20

                   
TK72E12N1,S1X


Toshiba MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044
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Toshiba Availability : 17799
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USD 0.7051

Multiples of: 50

179 A120 V3.6 mOhmsN - Channel20 V2 v to 4 V + 150 C255 WThrough HoleTO - 220 - 3ReelSi1 Channel10 V130 nCEnhancement  
IRFBE30LPBF


MOSFET N-Chan 800V 4.1 Amp
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Vishay Availability : 17795
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USD 1.265

Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 262TubeSi      
AUIRLR3636TRL


International Rectifier MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
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Infineon Availability : 17755
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USD 1.3821

Multiples of: 1

99 A60 V8.3 mOhmsn - channel    143 Wsmd/smtDPAK - 3Reelsi1 channel16 V33 nC aec - q101 
PJM84PSA


MOSFET P Trench 50V 130mA 2V @ 250uA 8 Ω @ 100mA,10V SOT-23 RoHS
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Pingjingsemi Availability : 17713
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USD 0.0127

Multiples of: 20

                   
1N65L


TO-252 MOSFETs ROHS
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Youtai Availability : 17687
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USD 0.0765

Multiples of: 5

                   
FDS6692A


MOSFET 30V 9A 11.5 OHM NCH POWER TR
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ON Semiconductor Availability : 17615
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USD 0.5855

Multiples of: 1

9 A30 V8.2 mOhmsn - channel  - 55 C+ 150 C1.47 Wsmd/smtSO - 8Cut Tapesi1 channel20 V enhancement powertrench
SI2343DS-T1-E3


MOSFET 30V 4.0A 1.25W 53 mohms @ 10V
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Vishay Availability : 17302
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USD 0.3399

Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
AO3416


MOSFET N Trench 20V 6.5A 1V @ 250uA 22 mΩ @ 6.5A,4.5V SOT-23-3L RoHS
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Alpha & Omega Availability : 14404
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USD 0.0605

Multiples of: 5

                   
TN5325K1-G


Transistor: N-MOSFET; unipolar; 250V; 1.2A; 360mW; SOT23-3
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Microchip Availability : 2910
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USD 0.3724

Multiples of: 3000

150 mA250 V7 OhmsN - Channel 600 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel10 V Enhancement  
SL2301


MOSFET P Trench 20V 2.8A 1V @ 250uA 112 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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SLKORMICRO Availability : 0
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USD 0.0131

Multiples of: 20

                   
BSS138K


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper Availability : 0
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USD 0.0071

Multiples of: 10

                   
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