About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN3016LFDF-7


MOSFET MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K
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Diodes Incorporated Availability : 17270
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USD 0.165

Multiples of: 1

         Smd/SmtU - DFN2020 - F - 6Cut TapeSi      
BSC16DN25NS3G


MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
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Infineon Availability : 17251
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USD 1.0534

Multiples of: 1

10.9 A250 V165 mOhmsN - Channel 2 V- 55 C+ 150 C62.5 WSmd/SmtPG - TDSON - 8ReelSi1 Channel10 V8.6 nCEnhancement Optimos
AO3422-HXY


60V 4.5A 8W 75mΩ@10V,5A N Channel SOT-23-3L MOSFETs ROHS
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HXY MOS Availability : 17246
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USD 0.0423

Multiples of: 10

                   
DMN2550UFA-7B


Diodes Incorporated MOSFET 20V N-Ch Enh FET 8 VGS 52.5pF 0.88nC
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Diodes Incorporated Availability : 17229
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USD 0.0473

Multiples of: 1

600 mA20 V450 mOhmsN - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.88 nCEnhancement  
FH4606B


SO-8 MOSFETs ROHS
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Xinfeihong Availability : 17227
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USD 0.0474

Multiples of: 5

                   
IQE013N04LM6CGSCATMA1


MOSFET
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Infineon Availability : 17214
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USD 1.0703

Multiples of: 1

31 A40 V1.35 mOhmsN - Channel 2 V- 55 C+ 175 C2.5 WSMD/SMTWHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V41 nCEnhancement  
IPP60R380C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
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Infineon Availability : 17210
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USD 1.3079

Multiples of: 1

            coolmos c6      
NCE3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 55 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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NCE Power Availability : 17207
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USD 0.028

Multiples of: 10

                   
FDMS86150


MOSFET PT5 100V/20V Nch PowerTrench MOSFET
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ON Semiconductor Availability : 17203
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USD 1.925

Multiples of: 1

60 A100 V4.85 mOhmsN - Channel  - 55 C+ 150 C156 WSmd/SmtPOWER - 56ReelSi1 Channel    Powertrench Power Clip
SI3493BDV-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay Availability : 17197
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USD 0.4241

Multiples of: 1

8 A20 V27.5 mOhmsP - Channel 900 mV- 55 C+ 150 C2.97 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V26.2 nCEnhancement  
BSC100N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 41A; 30W; PG-TDSON-8
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Infineon Availability : 17166
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USD 0.266

Multiples of: 1

            Optimos 3      
ZVN3310FTA


SOT23 MOSFETs ROHS
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TECH PUBLIC Availability : 17149
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USD 0.0674

Multiples of: 5

                   
NTZD3154NT1G


SOT563 MOSFETs ROHS
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TECH PUBLIC Availability : 17136
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USD 0.077

Multiples of: 5

                   
IRLR2905


TO-252-2 MOSFETs ROHS
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TECH PUBLIC Availability : 17135
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USD 0.1551

Multiples of: 5

                   
SL3401S


MOSFET P Trench 30V 4A 1.3V @ 250uA 60 mΩ @ 4A,10V SOT-23 RoHS
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SLKORMICRO Availability : 17098
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USD 0.0233

Multiples of: 10

                   
SI2302S


MOSFET N Trench 20V 3A 1V @ 250uA 80 mΩ @ 1A,2.5V SOT-23 RoHS
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Bourne Availability : 17074
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USD 0.0148

Multiples of: 20

                   
IRFS52N15DTRRP


N-Channel 150 V 51A (Tc) 3.8W (Ta), 230W (Tc) Surface Mount D2PAK
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Infineon Availability : 17072
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USD 1.3563

Multiples of: 1

            hexfet®      
SSM6J212FE,LF


Toshiba MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW
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Toshiba Availability : 17061
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USD 0.1472

Multiples of: 1

- 4 A- 20 V94 mOhmsP - Channel - 0.3 v to - 1 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 6ReelSi1 Channel8 V14.1 nC   
DMN62D0LFD-7


N-Channel 60 V 310mA (Ta) 480mW (Ta) Surface Mount X1-DFN1212-3
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Diodes Incorporated Availability : 17039
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USD 0.044

Multiples of: 1

310 mA60 V2 OhmsN - Channel 1 V- 55 C+ 150 C480 mWSmd/SmtX1 - DFN1212 - 3Cut TapeSi1 Channel20 V500 pCEnhancement  
FDMC8321LDC


Fairchild Semiconductor MOSFET
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ON Semiconductor Availability : 0
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USD 0.7869

Multiples of: 3000

         Smd/SmtDUALCOOL - 33 - 8ReelSi     Powertrench
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