About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDA59N25


MOSFET 250V N-Ch MOSFET
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ON Semiconductor Availability : 17604
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USD 1.815

Multiples of: 1

59 A250 V49 mOhmsN - Channel  - 55 C+ 150 C392 WThrough HoleTO - 3PN - 3TubeSi1 Channel30 V Enhancement  
AO4407A


SOP-8 MOSFETs ROHS
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Youtai Availability : 17595
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USD 0.0733

Multiples of: 5

                   
RUF025N02TL


MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 2A
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ROHM Availability : 17581
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USD 0.2178

Multiples of: 1

2.5 A20 V39 mOhmsN - Channel    800 mWSmd/SmtTUMT - 3ReelSi1 Channel10 V5 nCEnhancement  
BSO613SPVGXUMA1


MOSFET TRENCH 40<-<100V
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Infineon Availability : 17562
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USD 0.4623

Multiples of: 1

            SIPMOSâ„¢      
IPD068P03L3 G


MOSFET P-Channel -30V MOSFET
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Infineon Availability : 17556
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USD 0.4454

Multiples of: 1

- 70 A- 30 V6.8 mOhmsP - Channel20 V - 55 C+ 175 C100 WSmd/SmtDPAK - 2Reel   68 nC   
SSM6N36FE,LM


Toshiba MOSFET 20V VDSS 10V VGSS N-Ch 150mW PD 1.5V
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Toshiba Availability : 17554
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USD 0.0568

Multiples of: 1

500 mA20 V630 mOhmsN - Channel    150 mWSmd/SmtSOT - 23 - 6ReelSi2 Channel     
FQU17P06TU


Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK
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ON Semiconductor Availability : 17524
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USD 0.4532

Multiples of: 1

   P Channel               
IPD30N08S2L-21


MOSFET OPTIMOS PWR-TRANS N-CH 75V30A 20.5mOhm
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Infineon Availability : 17518
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USD 0.7854

Multiples of: 1

30 A75 V20.5 mOhmsN - Channel 1.2 V- 55 C+ 175 C136 WSmd/SmtTO - 252ReelSi1 Channel10 V56 nCEnhancementAec - Q101Optimos
BSC030N04NS G


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon Availability : 17496
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USD 0.4945

Multiples of: 1

23 A40 V3 mOhmsN - Channel 2 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V61 nCEnhancement Optimos
BSC123N10LS G


Infineon Technologies MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
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Infineon Availability : 17492
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USD 0.7128

Multiples of: 1

10.6 A100 V12.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C114 WSmd/SmtTDSON - 8ReelSi1 Channel20 V68 nCEnhancement Optimos
Hot DMN1150UFB-7B


Diodes Incorporated MOSFET N-CH MOSFET 12V
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Diodes Incorporated Availability : 17467
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USD 0.0527

Multiples of: 1

1.41 A12 V210 mOhmsN - Channel 350 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtX1 - DFN1006 - 2ReelSi1 Channel6 V1.5 nCEnhancement  
Hot 2N7002H6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
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Infineon Availability : 17460
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USD 0.0243

Multiples of: 3000

            Optimos      
2N7002


Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
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Taitron Availability : 17460
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USD 0.0437

Multiples of: 3000

                   
TQM2N7002CU RFG


MOSFETs 60V, 0.31A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor Availability : 17460
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USD 0.0451

Multiples of: 1

310 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C568 mWSMD/SMTSOT - 323Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
TQM2N7002DCU6 RFG


MOSFETs 60V, 0.26A, Dual N-Channel Small-signal MOSFETs
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Taiwan Semiconductor Availability : 17460
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USD 0.0671

Multiples of: 1

260 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C376 mWSMD/SMTSOT - 363Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
SI3443CDV-T1-GE3


MOSFET -20V Vds 12V Vgs TSOP-6
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Vishay Availability : 17460
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USD 0.1077

Multiples of: 3000

         Smd/SmtTSOP - 6Cut TapeSi     Trenchfet
SI8406DB-T2-E1


MOSFET 20V 16A 13W 33mohm @ 4.5V
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Vishay Availability : 2781
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USD 0.1023

Multiples of: 1

   N - Channel     Smd/SmtBUMP 6ReelSi     Trenchfet
YJL03N06A


Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 2.4A; 1.2W
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Yangjie Availability : 2337
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USD 0.028

Multiples of: 10

            Trench Power Mv      
AP2316


SOT-23 MOSFETs ROHS
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Quan Li Availability : 0
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USD 0.0334

Multiples of: 10

                   
2N7002BKW,115


MOSFET Single N-Channel 60V 300mA
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Nexperia Availability : 0
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USD 0.0251

Multiples of: 3000

310 mA60 V1.6 OhmsN - Channel 1.1 V- 55 C+ 150 C330 mW (1/3 w)Smd/SmtSOT - 323ReelSi1 Channel10 V0.5 nCEnhancement  
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