About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
Manufacturer
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TN2106K1-G


Transistor: N-MOSFET; unipolar; 60V; 0.6A; 360mW; SOT23-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 32010
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USD 0.1791

Multiples of: 3000

280 mA60 V2.5 OhmsN - Channel 600 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel10 V Enhancement  
SI1922EDH-T1-GE3


MOSFET 20V 1.3A 1.25W
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Vishay Availability : 17460
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USD 0.1347

Multiples of: 3000

1.3 A20 V0.198 OhmsN - Channel8 V1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 363 - 6ReelSi2 Channel4.5 V1.6 nCEnhancement Trenchfet
NTMFS4941NT1G


MOSFET NFET SO8FL 30V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 17460
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USD 0.3639

Multiples of: 1

47 A30 V9 mOhmsn - channel  - 55 C+ 150 C2.56 Wsmd/smtSO - 8FLReelsi1 channel20 V    
SI7489DP-T1-GE3


P-Channel 100 V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay Availability : 17460
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USD 1.0566

Multiples of: 3000

28 A100 V41 mOhmsP - Channel 1 V- 55 C+ 150 C83 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel- 10 V106 nCEnhancement Trenchfet
NVMFD024N06CT1G


MOSFET T6 60V SG HIGHER RDS-ON PORTFOLIO
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ON Semiconductor Availability : 17460
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USD 1.0798

Multiples of: 1

           Cut Tape       
BSS138PW.115


Transistor: N-MOSFET; unipolar; 60V; 0.32A; 260mW; SOT323
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Nexperia Availability : 17438
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USD 0.1078

Multiples of: 1

                   
TQM2N7002CX RFG


MOSFETs 60V, 0.38A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor Availability : 17435
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USD 0.0418

Multiples of: 1

380 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C806 mWSMD/SMTSOT - 23Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
SSM3K131TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=30V VGSS=+-20V ID=6.0A RDSON=0.0415Ohm @ 4.5V in UFM package
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Toshiba Availability : 17435
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USD 0.1756

Multiples of: 1

6 A30 V27.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C800 mWSmd/SmtUFM - 3Cut TapeSi1 Channel20 V10.1 nCEnhancement U - Mosiv
DMN2040U-13


MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 10K
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Diodes Incorporated Availability : 17417
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USD 0.0682

Multiples of: 1

6 A20 V25 mOhmsN - Channel 500 mV- 55 C+ 150 C1.36 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V7.5 nCEnhancement  
UT6MA2TCR


MOSFET 30V NCH+PCH MIDDLE PWR
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ROHM Availability : 17416
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USD 0.2148

Multiples of: 1

4 A30 V46 mOhms , 70 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2 WSmd/SmtHuml2020l - 8Cut TapeSi2 Channel20 V4.3 nC , 6.7 nCEnhancement  
SSM3K16CT,L3F(T


SOT-883-3 MOSFETs ROHS
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Toshiba Availability : 17407
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USD 0.0241

Multiples of: 5

                   
HSBB6066


60V 60A 4.4mΩ@10V,20A 45W 1.65V@250uA 25pF@30V N Channel 1.67nF@30V 33nC@10V -55℃~+150℃@(Tj) PRPAK3x3 MOSFETs ROHS
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HUASHUO Availability : 17406
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USD 0.238

Multiples of: 1

                   
IPP028N08N3GXKSA1


Transistor: N-MOSFET; unipolar; 80V; 100A; 300W; PG-TO220-3
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Infineon Availability : 17406
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USD 3.4497

Multiples of: 1

            Optimos 3      
DMP3028LFDE-7


Diodes Incorporated MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A
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Diodes Incorporated Availability : 17372
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USD 0.1386

Multiples of: 1

- 5.3 A- 30 V60 mOhmsP - Channel - 1 v to - 2.4 V- 55 C+ 150 C660 mWSmd/SmtUDFN2020 - 6ReelSi1 Channel20 V10.9 nCEnhancement  
SUD50P10-43L-BE3


MOSFET 100V P-CH MOSFET (D-S) 17
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Vishay Availability : 17363
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USD 1.3143

Multiples of: 1

37.1 A100 V43 mOhmsP - Channel 3 V- 55 C+ 175 C136 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V54 nCEnhancement  
RTF016N05FRATL


N-Channel 45V 1.6A (Ta) 800mW Surface Mount TUMT3
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ROHM Availability : 17319
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USD 0.191

Multiples of: 3000

          3 - SMD , FLAT LEADDigi - Reel®Mosfet (Metal Oxide)      
IRLML2030TR(UMW)


SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Youtai Availability : 17295
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USD 0.0331

Multiples of: 10

                   
FDS6975


Transistor: P-MOSFET x2; unipolar; -20V; -6A; 2W; SO8
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ON Semiconductor Availability : 17285
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USD 0.6532

Multiples of: 1

            Powertrench®      
IPG16N10S461ATMA1


MOSFET MOSFET
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Infineon Availability : 17236
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USD 0.5368

Multiples of: 1

16 A , 16 A100 v , 100 V53 mOhms , 53 mOhmsN - Channel 2.8 V- 55 C+ 175 C29 WSmd/SmtTDSON - 8ReelSi1 Channel+/- 20 V5.4 nCEnhancementAec - Q101 
SI8823EDB-T2-E1


MOSFET 20V Vds 8V Vgs MICRO FOOT 1.5 x 1
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Vishay Availability : 0
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USD 0.0913

Multiples of: 1

2.7 A20 V77 mOhmsP - Channel 800 mV- 55 C+ 150 C900 mWSmd/SmtMICRO - FOOT - 4Cut TapeSi1 Channel8 V17 nCEnhancement Trenchfet
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