About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML5203TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 14753
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USD 0.044

Multiples of: 5

                   
IRLR3410TR


TO-252 MOSFETs ROHS
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Youtai Availability : 14750
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USD 0.1013

Multiples of: 5

                   
SQM120P06-07L-GE3


MOSFET 60 V 120A 375 W AEC-Q101 Qualified
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Vishay Availability : 14744
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USD 2.0591

Multiples of: 1

- 120 A- 60 V6.7 mOhmsP - Channel20 V- 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3ReelSi1 Channel- 10 V180 nCEnhancementAec - Q101Trenchfet
BSS127IXTSA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon Availability : 14743
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USD 0.0484

Multiples of: 1

21 mA600 V500 OhmsN - Channel 2.6 V- 55 C+ 150 C500 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V650 pCEnhancement  
HUF76629D3


PWR MOS ULTRAFET 100V/20A/0.055 OHMS N-CH LL TO-251AA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 14741
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USD 1.2863

Multiples of: 1

                   
SI2305-TP


MOSFET P-Channel MOSFET, SOT-23 package
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Micro Commercial Components (MCC) Availability : 14729
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USD 0.0781

Multiples of: 1

4.1 A8 V45 mOhmsP - Channel 900 mV- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V15 nCEnhancement  
AP2045Q


20V 65A 4.6mΩ@4.5V,20A 35W N Channel DFN-8(3x3.1) MOSFETs ROHS
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Quan Li Availability : 14724
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USD 0.137

Multiples of: 5

                   
IPZ40N04S53R1ATMA1


Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TDSON-8
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Infineon Availability : 14716
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USD 0.3993

Multiples of: 1

            Optimos 5      
STP110N8F6


MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
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STMicroelectronics Availability : 14715
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USD 0.4192

Multiples of: 1

110 A80 V6.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C200 WThrough HoleTO - 220 - 3 Si1 Channel10 V150 nCEnhancement Stripfet
YJL3401A


Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
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Yangjie Availability : 14705
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USD 0.0283

Multiples of: 10

            Trench Power Lv      
HL3400


30V 5.6A 1.2W 21m@10V,5.6A 900mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng Availability : 14674
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USD 0.0164

Multiples of: 20

                   
IPB70N10S3L-12


Infineon Technologies MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
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Infineon Availability : 14652
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USD 1.4145

Multiples of: 1

70 A100 V12 mOhmsN - Channel20 V - 55 C+ 175 C125 WSmd/SmtD2PAK - 3ReelSi1 Channel20 V60 nC Aec - Q101Optimos
SUD50P06-15L-E3


MOSFET P-CH 60V 50A
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Vishay Availability : 14639
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USD 1.177

Multiples of: 1

           -Si     Trenchfet
SIZF920DT-T1-GE3


MOSFET Dual 30V Vds PowerPAIR 6x5F
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Vishay Availability : 14636
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USD 0.198

Multiples of: 1

76 A , 197 A30 V3.07 mOhms , 1.05 mOhmsN - Channel 1.1 V- 55 C+ 150 C28 w , 74 WSmd/SmtPowerpair 6X5FCut TapeSi2 Channel- 16 v , 20 v , - 12 v , 16 v29 nC , 125 nCEnhancement Trenchfet; Powerpak
TSM240N03CX RFG


MOSFET N Trench 30V 6.5A (Tc) 2.5V @ 250uA 24 mΩ @ 6A,10V SOT-23 RoHS
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Taiwan Semiconductor Availability : 14632
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USD 0.11

Multiples of: 1

6.5 A30 V17 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.1 nCEnhancement  
AP3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 32 mΩ @ 5.8A,10V SOT23 RoHS
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Quan Li Availability : 14627
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USD 0.0293

Multiples of: 20

                   
TK6A80E,S4X(S


TO-220SIS MOSFETs ROHS
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Toshiba Availability : 14627
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USD 0.3866

Multiples of: 1

                   
HYG090ND06LS1C2


60V 56A 60W 8mΩ@10V,20A 2 N-Channel PDFN-8(5.2x5.9) MOSFETs ROHS
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HuaYi Availability : 14622
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USD 0.2282

Multiples of: 1

                   
DMP6023LE-13


Diodes Incorporated MOSFET P-Ch 60V Enh Mode 145W 20Vgs 2569pF
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Diodes Incorporated Availability : 14613
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USD 0.2019

Multiples of: 5

- 7 A- 60 V28 mOhmsP - Channel - 3 V- 55 C+ 150 C2 WSmd/SmtSOT - 223 - 4Reel-1 Channel+/- 20 V53.1 nCEnhancement  
IAUZ30N06S5L140ATMA1


N-Channel 60V 30A (Tj) 33W (Tc) Surface Mount PG-TSDSON-8-32
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Infineon Availability : 14613
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USD 0.2684

Multiples of: 1

          8 - PowertdfnTape And ReelMosfet (Metal Oxide)      
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