About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSP125H6433XTMA1


Infineon Technologies MOSFET N-Ch 600V 120mA SOT-223-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 15033
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USD 0.2519

Multiples of: 1

120 mA600 V45 OhmsN - Channel 1.3 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 3ReelSi1 Channel20 V4.4 nCEnhancement  
BSP320SH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 2.9A; 1.8W; SOT223
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 15031
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USD 0.2671

Multiples of: 1

            Sipmos      
IPD60R1K4C6ATMA1


MOSFET LOW POWER_LEGACY
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Infineon Availability : 15000
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USD 0.3124

Multiples of: 1

3.2 A600 V1.26 OhmsN - Channel 2.5 V- 55 C+ 150 C28.4 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V9.4 nCEnhancement Coolmos
IRFR420TRPBF-BE3


MOSFET 500V N-CH MOSFET
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Vishay Availability : 14981
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USD 0.5885

Multiples of: 1

2.4 A500 V3 OhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V19 nCEnhancement  
NX138AKMYL


MOSFET MOSFET DISCRETES
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Nexperia Availability : 14968
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USD 0.0275

Multiples of: 1

270 mA60 V4.2 OhmsN - Channel 1.5 V- 55 C+ 150 C648 mWSMD/SMTDFN1006 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V400 pCEnhancement  
IRLMS6802TRPBF


MOSFET P Trench 20V 5.6A 1.2V @ 250uA 50 mΩ @ 5.1A,4.5V SOT-23-6 RoHS
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Infineon Availability : 14966
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USD 0.1496

Multiples of: 1

            Hexfet®      
SI2310A


60V 3A 1.2W 92mΩ@4.5V,2A 2V@250uA null SOT-23 MOSFETs ROHS
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FUXINSEMI Availability : 14957
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USD 0.022

Multiples of: 20

                   
BSN20BKR


Transistor: N-MOSFET; unipolar; 60V; 0.17A; 402mW; SOT23
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Nexperia Availability : 14918
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USD 0.0189

Multiples of: 20

                   
DMN2991UDA-7B


MOSFET MOSFET BVDSS: 8V 24V X2-DFN0806-6 T&R 10K
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Diodes Incorporated Availability : 14866
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USD 0.0627

Multiples of: 1

                   
BSS123


100V 150mA 3.5Ω@10V,120mA 250mW N Channel SOT-23 MOSFETs ROHS
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SLKORMICRO Availability : 14860
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USD 0.0119

Multiples of: 20

                   
BSC196N10NSGATMA1


Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
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Infineon Availability : 14854
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USD 0.5613

Multiples of: 1

            Optimos 2      
FQT4N20LTF


Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
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ON Semiconductor Availability : 14821
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USD 0.3188

Multiples of: 1

            Qfet®      
AO4407


SOP-8 MOSFETs ROHS
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TECH PUBLIC Availability : 14819
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USD 0.0945

Multiples of: 5

                   
IPD042P03L3GATMA1


MOSFET SMALL SIGNALP-CH
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Infineon Availability : 14816
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USD 0.6996

Multiples of: 1

70 A30 V6.8 mOhmsP - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 4.5 V131 nCEnhancement  
SPD30P06P G


Infineon Technologies MOSFET P-Ch -60V -30A DPAK-2
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Infineon Availability : 14814
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USD 0.5742

Multiples of: 1

- 30 A- 60 V75 mOhmsP - Channel 2.1 V- 55 C+ 175 C125 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 10 V32 nCEnhancement Sipmos
ZXMS6004FFQ-7


MOSFETs Low Side IntelliFET SOT23F T&R 3K
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Diodes Incorporated Availability : 14805
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USD 0.3146

Multiples of: 1

1.3 A60 V500 mOhmsN - Channel 1.5 V- 40 C+ 150 C1.5 WSMD/SMTSOT - 23F - 3Reel , Cut TapeSi1 Channel--Enhancement  
CRSS042N10N


MOSFET N Trench 100V 120A (Tc) 4V @ 250uA 4.2 mΩ @ 50A,10V T0-263 RoHS
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CRMICRO Availability : 14803
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USD 0.4522

Multiples of: 1

                   
SIR846BDP-T1-RE3


MOSFET N-CHANNEL 100-VD-S PowerPAK SO-8
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Vishay Availability : 14800
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USD 0.6665

Multiples of: 1

65.8 A100 V8 mOhmsN - Channel 4 V- 55 C+ 150 C83.3 WSMD/SMTPOWERPAK - SO - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V34.5 nCEnhancement TrenchFET, PowerPAK
IAUC60N04S6L039ATMA1


MOSFET MOSFET_20V 40V
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Infineon Availability : 14796
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USD 0.3146

Multiples of: 1

           Cut Tape       
IRLHS6276TRPBF


Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
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Infineon Availability : 14787
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USD 0.1826

Multiples of: 1

            hexfet®      
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