About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SN7002NH6327-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper Availability : 13023
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USD 0.0069

Multiples of: 50

                   
DI0A35N06PGK-AQ


MOSFETs MOSFET, DFN1006-3, 60V, 0.35A, 150C, N, AEC-Q101
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Diotec Availability : 13011
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USD 0.0352

Multiples of: 1

350 mA60 V1.4 OhmsN - Channel 1 V- 55 C+ 150 C223 mWSMD/SMTSOT - 883 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.9 nCEnhancementAEC - Q101 
BSZ120P03NS3 G


Infineon Technologies MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
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Infineon Availability : 12997
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USD 0.3312

Multiples of: 1

- 40 A- 30 V12 mOhmsP - Channel 3.1 V- 55 C+ 150 C52 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V45 nCEnhancement Optimos
DMN2320UFB4-7B


MOSFET 20V N-Ch Enh FET 8Vgss .52W 71pF
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Diodes Incorporated Availability : 12989
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USD 0.1818

Multiples of: 1

   N - Channel       ReelSi1 Channel     
PSMN013-30MLC,115


NXP Semiconductors MOSFET N-channel MOSFET logic level LFPAK33
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Nexperia Availability : 12980
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USD 0.1485

Multiples of: 1

39 A27 V16.9 mOhmsN - Channel1.95 V1.3 V- 55 C+ 175 C38 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V8 nCEnhancement  
FDC6312P


SOT-23-6L MOSFETs ROHS
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TECH PUBLIC Availability : 12973
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USD 0.0839

Multiples of: 5

                   
S8N10


100V 6.5A 110mΩ 3V N Channel SOT-89-3L MOSFETs ROHS
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HL Availability : 12968
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USD 0.0319

Multiples of: 10

                   
SSM3J328R,LF


P-Channel 20 V 6A (Ta) 1W (Ta) Surface Mount SOT-23F
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Toshiba Availability : 12968
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USD 0.0417

Multiples of: 10

- 6 A- 20 V47.4 mOhmsP - Channel8 V- 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 23F - 3ReelSi1 Channel- 1.5 V12.8 nCEnhancement  
DMN3053L-7


MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF
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Diodes Incorporated Availability : 12964
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USD 0.0486

Multiples of: 5

4 A30 V45 mOhmsN - Channel 600 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V17.2 nCEnhancement  
40N06D


60V 40A 12mΩ 2.5V N Channel PDFN-8(3x3) MOSFETs ROHS
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HL Availability : 12964
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USD 0.0624

Multiples of: 5

                   
SIRA54ADP-T1-RE3


MOSFETs N-CHANNEL 40-V (D-S) MOSFET
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Vishay Availability : 12918
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USD 0.6897

Multiples of: 1

36.2 A40 V2.2 mOhmsN - Channel 2.5 V- 55 C+ 150 C5.2 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 16 V , + 20 V70 nCEnhancement  
DMP10H4D2S-7


MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF
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Diodes Incorporated Availability : 12915
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USD 0.0447

Multiples of: 5

270 mA100 V4.2 OhmsP - Channel 1 V- 55 C+ 150 C440 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V1.8 nCEnhancement  
IRFS4321TRL7PP


International Rectifier MOSFET MOSFET N-CH 150V 86A D2PAK
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Infineon Availability : 12901
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USD 2.2344

Multiples of: 1

86 A150 V11.7 mOhmsN - Channel30 V3 V- 55 C+ 175 C350 WSmd/SmtD2PAK - 7ReelSi1 Channel30 V71 nCEnhancement  
PSMN8R2-80YS,115


MOSFET N-CH 80V 8.5 mOhm Standard MOSFET
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Nexperia Availability : 12882
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USD 0.6457

Multiples of: 1

82 A80 V13.4 mOhmsN - Channel 1 V- 55 C+ 175 C130 WSmd/SmtSOT - 669 (LFPAK)ReelSi1 Channel10 V55 nCEnhancement  
IPD70N03S4L04ATMA1


MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2
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Infineon Availability : 12876
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USD 0.4866

Multiples of: 1

70 A30 V3.6 mOhmsN - Channel 1 V- 55 C+ 175 C68 WSmd/SmtTO - 252 - 3ReelSi1 Channel16 V48 nCEnhancementAec - Q101 
TPN6R303NC,LQ(S


30V 20A 19W 6.3mΩ@10V,10A 2.3V@200uA N Channel TSON-8(3.1x3.1) MOSFETs ROHS
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Toshiba Availability : 12871
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USD 0.1033

Multiples of: 5

                   
WSD30L40DN


MOSFET P Trench 30V 40A (Tc) 2.3V @ 250uA 14 mΩ @ 20A,10V DFN 3x3-8 RoHS
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Winsok Availability : 12824
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USD 0.1654

Multiples of: 1

                   
IPB60R280C6ATMA1


Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
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Infineon Availability : 12804
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USD 1.7031

Multiples of: 1

            coolmos c6      
BSC016N06NSATMA1


Infineon Technologies MOSFET N-Ch 60V 100A DSON-8 OptiMOS
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Infineon Availability : 12802
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USD 0.9801

Multiples of: 1

100 A60 V1.6 mOhmsN - Channel 2.8 V- 55 C+ 150 C139 WSmd/SmtDSON - 8Reel  20 V71 nC  Optimos
BSZ0911LSATMA1


MOSFET TRENCH <= 40V
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Infineon Availability : 12794
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USD 0.1895

Multiples of: 1

40 A30 V7.2 mOhmsN - Channel 2 V- 55 C+ 150 C-SMD/SMTTSDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V10 nCEnhancement  
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