About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI3442BDV-T1-BE3


MOSFET N-CHANNEL 2.5-V (G-S)
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Vishay Availability : 12793
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USD 0.2556

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4.2 A20 V57 mOhmsN - Channel 1.8 V- 55 C+ 150 C1.67 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 12 V , + 12 V3 nCEnhancement  
BSC010N04LSI


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
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Infineon Availability : 12792
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USD 0.9064

Multiples of: 1

100 A40 V1.05 mOhmsN - Channel 1.2 V- 55 C+ 150 C139 WSmd/SmtDSON - 8ReelSi1 Channel20 V87 nCEnhancement Optimos
PMV35EPER


MOSFET PMV35EPE/TO-236AB/REEL 7" Q3/T
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Nexperia Availability : 12779
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USD 0.1155

Multiples of: 1

           Cut TapeSi      
FDC602P


SOT-26 MOSFETs ROHS
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TECH PUBLIC Availability : 12778
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USD 0.0946

Multiples of: 5

                   
EM6K7T2CR


Mosfet Array 2 N-Channel (Dual) 20V 200mA (Ta) 150mW Surface Mount EMT6
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ROHM Availability : 12750
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USD 0.0625

Multiples of: 5

200 mA20 V1.2 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel8 V-Enhancement  
FH38P03G6


DFN-8-EP(3.3x3.3) MOSFETs ROHS
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Xinfeihong Availability : 12746
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USD 0.0668

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FDC6420C


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC Availability : 12738
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USD 0.0649

Multiples of: 5

                   
STD20NF06L


null 30A 35mO@15A,10V 55W null TO-252 MOSFETs ROHS
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Youtai Availability : 12728
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USD 0.1423

Multiples of: 5

                   
RS1L120GNTB


N-Channel 60 V 12A (Ta), 36A (Tc) 3W (Ta) Surface Mount 8-HSOP
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ROHM Availability : 12710
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USD 0.7623

Multiples of: 1

36 A60 V12.7 mOhmsN - Channel 1.3 V- 55 C+ 150 C27 WSmd/SmtHSOP - 8Cut TapeSi1 Channel20 V26 nCEnhancement  
SI2309CDS


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC Availability : 12708
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USD 0.0493

Multiples of: 5

                   
AP2080K


MOSFET N Trench 20V 50A 900mV @ 1mA 9.8 mΩ @ 20A,4.5V TO-252 RoHS
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Quan Li Availability : 12705
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USD 0.09

Multiples of: 5

                   
IRF7470TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai Availability : 12697
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USD 0.1243

Multiples of: 5

                   
IPN60R1K0PFD7SATMA1


null 4.7A 6W 1O@10V,1A null SOT-223-4 MOSFETs ROHS
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Infineon Availability : 12694
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USD 0.263

Multiples of: 1

           Cut Tape       
SE2102E


MOSFET N Trench 20V 600mA 900mV @ 250uA 350 mO @ 600mA,4.5V SOT-523 RoHS
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SINO-IC Availability : 12688
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USD 0.0161

Multiples of: 20

                   
IPC50N04S5L5R5ATMA1


MOSFET MOSFET_(20V 40V)
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Infineon Availability : 12677
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USD 0.3545

Multiples of: 1

           Cut TapeSi    Aec - Q101 
ECH8654-TL-H


Mosfet Array 2 P-Channel (Dual) 20V 5A 1.5W Surface Mount 8-ECH
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ON Semiconductor Availability : 12662
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USD 0.3146

Multiples of: 1

- 5 A- 20 V38 mOhmsP - Channel     Smd/SmtECH - 8ReelSi1 Channel     
DMN10H120SE-13


MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
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Diodes Incorporated Availability : 12661
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USD 0.2078

Multiples of: 1

3.6 A100 V110 mOhmsN - Channel 1.5 V- 55 C+ 150 C2.1 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V10 nCEnhancement  
2N7002W


Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT323
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Luguang Availability : 12634
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USD 0.0364

Multiples of: 5

                   
WST4045


MOSFET SOT-23-3L RoHS
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Winsok Availability : 12633
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USD 0.0709

Multiples of: 5

                   
ISC012N04NM6ATMA1


MOSFET TRENCH <= 40V
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Infineon Availability : 12610
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USD 0.7469

Multiples of: 1

232 A40 V1.2 mOhmsN - Channel 2.8 V- 55 C+ 175 C125 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V51 nCEnhancement  
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