X-On Electronics has gained recognition as a prominent supplier of DMP10H4D2S-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP10H4D2S-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP10H4D2S-7 Diodes Incorporated

Name: DMP10H4D2S-7
Brand: Diodes Incorporated
SKU: DMP10H4D2S7_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMP10H4D2S-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMP10H4D2S-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF
Datasheet:	DMP10H4D2S-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1192 ea
Line Total: USD 0.6

Availability - 8967
Ship by Tue. 20 May to Fri. 23 May

MOQ: 5 Multiples: 5
Pack Size: 5

DMP10H4D2S-7 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

8967

Ship by Tue. 20 May to Fri. 23 May

MOQ : 5
Multiples : 5

5 : USD 0.1192
50 : USD 0.095
150 : USD 0.0816
500 : USD 0.0552
3000 : USD 0.045
6000 : USD 0.0424

1537

Ship by Fri. 09 May to Tue. 13 May

MOQ : 1
Multiples : 1

1 : USD 0.535
10 : USD 0.308
50 : USD 0.2024
100 : USD 0.1721
190 : USD 0.1012

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

270 mA 270 mA

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

4.2 Ohms 4.2 Ohms

Transistor Polarity

P - Channel P - Channel

Vgs th - Gate-Source Threshold Voltage

1 V 1 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

440 mW 440 mW

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

1.8 nC 1.8 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Height

0.975 mm 0.975 mm

Length

2.9 mm 2.9 mm

Series

Dmp10 Dmp10

Transistor Type

1 P - Channel 1 P - Channel

Width

1.3 mm 1.3 mm

Brand

Diodes Incorporated Diodes Incorporated

Cnhts

8541290000 8541290000

Fall Time

4.9 ns 4.9 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

2.6 ns 2.6 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

8.4 ns 8.4 ns

Typical Turn-On Delay Time

3.3 ns 3.3 ns

Category

MOSFET MOSFET

Brand Category

Diodes Incorporated Diodes Incorporated

Notes:- Show Stocked Products With Similar Attributes.

DMP10H4D2S-7 Alternative Parts

We are delighted to provide the DMP10H4D2S-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP10H4D2S-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

DMP10H4D2S-7 is an enhancement mode, N-channel, PowerTrench MOSFET manufactured by Diodes Incorporated. It has a drain-source voltage rating of 100V and a gate-source voltage rating of 20V. Its drain-source on-resistance is 40 mOhms and its transconductance is 0.35 S/m. The gate capacitance of the device is 87pF. The device is designed to fit into 100% UIS tested, 3.3V and 5V, standard and low-voltage applications. It is RoHS compliant and Halogen-Free.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Diodes
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Availability	Price	Buy Price	Quantity
8967 Ship by Tue. 20 May to Fri. 23 May MOQ : 5 Multiples : 5	5 : USD 0.1192 50 : USD 0.095 150 : USD 0.0816 500 : USD 0.0552 3000 : USD 0.045 6000 : USD 0.0424

1537 Ship by Fri. 09 May to Tue. 13 May MOQ : 1 Multiples : 1	1 : USD 0.535 10 : USD 0.308 50 : USD 0.2024 100 : USD 0.1721 190 : USD 0.1012

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