DMN3053L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(ON) T = +25C Low Gate Threshold Voltage A Low Input Capacitance 45m V = 10V 4.0 A GS 30V Fast Switching Speed 50m V = 4.5V 3.5A GS Low Input/Output Leakage ESD Protected Gate Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET has been designed to minimize the Qualified to AEC-Q101 Standards for High Reliability on-state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management applications. Mechanical Data Case: SOT23 Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Load Switch Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Finish Matte Tin annealed over Copper Power management functions e3 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) SOT23 D G S ESD PROTECTED Equivalent Circuit Top View Top View Ordering Information (Note 4) Part Number Case Packaging DMN3053L-7 SOT23 3000/Tape & Reel DMN3053L-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3053L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 4.0 A A Continuous Drain Current (Note 6) V = 10V I GS D State 3.5 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) 35 A I DM Maximum Body Diode Forward Current (Note 6) 1.5 A I S Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.76 A Total Power Dissipation (Note 5) W P D T = +70C 0.48 A Steady state R 165 C/W JA Thermal Resistance, Junction to Ambient (Note 5) t<10s R 114 C/W JA 1.2 T = +25C A Total Power Dissipation (Note 6) P W D 0.8 T = +70C A Steady state 100 C/W R JA Thermal Resistance, Junction to Ambient (Note 6) t<10s 69 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Body Leakage 10 A I V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.6 1.4 V V V = V , I = 250A GS(th) DS GS D V = 10V, I = 4.0A 36 45 GS D 38 50 V = 4.5V, I =3.5A GS D Static Drain-Source On-Resistance m R DS (ON) 42 53 V = 3.0V, I =3.0A GS D 44 55 V = 2.5V, I =2.8A GS D Source-Drain Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.25A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 676 Input Capacitance C pF iss = 15V, V = 0V V DS GS 54 Output Capacitance C pF oss f = 1.0MHz 42 Reverse Transfer Capacitance C pF rss 15.5 Gate Resistance R V = V = 0V,f = 1.0MHz g DS GS 7.3 Total Gate Charge (V = 4.5V) Q nC GS g 17.2 Total Gate Charge (V = 10V) Q nC GS g V = 15V, I = 4A DS D Gate-Source Charge 1.2 nC Q gs Gate-Drain Charge 0.9 nC Q gd Turn-On Delay Time 2.0 ns t D(on) Turn-On Rise Time 5.5 ns t r V = 15V, V = 10V, DD GS 152 R = 15 , R = 6 Turn-Off Delay Time t ns L G D(off) 32 Turn-Off Fall Time t ns f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2 oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 April 2014 DMN3053L Diodes Incorporated www.diodes.com Document number: DS36883 Rev. 2 - 2 NEW PRODUCT