About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP510DL-7


MOSFET P-Ch Enh Mode FET 310mW -50Vdss 30Vgss
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 12212
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USD 0.0217

Multiples of: 10

- 180 mA- 50 V10 OhmsP - Channel - 2 V- 55 C+ 150 C310 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 5 V Enhancement  
AUIRF1324S-7P


Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
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Infineon Availability : 12203
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USD 2.8438

Multiples of: 1

429 A24 V1 mOhmsN - Channel20 V - 55 C 300 WSmd/SmtD - PAK - 3Tube   180 nCEnhancement  
LBSS139DW1T1G


50V 0.2A 380mW 3.5O@5V,200mA null SC-88 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Leshan Availability : 12202
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USD 0.0208

Multiples of: 10

                   
SI2302CDS


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 12202
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USD 0.0209

Multiples of: 20

                   
IRLML2402


16V 1.2A null SOT-23 MOSFETs ROHS
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Hottech Availability : 12199
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USD 0.026

Multiples of: 10

                   
AUIRFR3806TRL


International Rectifier MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms
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Infineon Availability : 12180
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USD 1.0549

Multiples of: 1

43 A60 V15.8 mOhmsN - Channel 4 V- 55 C+ 175 C71 WSmd/SmtDPAK - 3ReelSi1 Channel20 V22 nCEnhancementAec - Q101 
IRFL014NTRPBF


MOSFET N Trench 55V 1.9A 4V @ 250uA 160 mΩ @ 1.9A,10V SOT-223 RoHS
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Infineon Availability : 12177
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USD 0.1991

Multiples of: 1

   N Channel      SOT - 223Reel       
IRF9630PBF


P-Channel 200 V 6.5A (Tc) 74W (Tc) Through Hole TO-220AB
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Vishay Availability : 12162
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USD 0.3985

Multiples of: 1

6.5 A200 V800 mOhmsP - Channel 2 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V29 nCEnhancement  
DMN65D8LDWQ-7


MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
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Diodes Incorporated Availability : 12132
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USD 0.0605

Multiples of: 1

   N - Channel     Smd/SmtSOT - 363 - 6Cut TapeSi2 Channel   Aec - Q101 
SPD03N60C3ATMA1


MOSFET LOW POWER_LEGACY
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Infineon Availability : 12125
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USD 0.3921

Multiples of: 2500

 600 V       Smd/SmtTO - 252 - 3Cut TapeSi     Coolmos
TS19452CS RL


AC/DC WLED DRIVER WITH INTERNAL MOSFET
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Taiwan Semiconductor Availability : 12125
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USD 0.4491

Multiples of: 1

         smd/smtSOP - 8Reel       
STS8DNF3LL


MOSFET N-Ch 30 Volt 8 Amp
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STMicroelectronics Availability : 12125
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USD 0.5313

Multiples of: 2500

8 A30 V20 mOhmsn - channel16 V - 55 C+ 150 C2 Wsmd/smtSO - 8Reel    enhancement  
FDD13AN06A0


Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; DPAK
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ON Semiconductor Availability : 12125
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USD 0.8826

Multiples of: 2500

            Powertrench®      
FCD5N60TM


Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
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ON Semiconductor Availability : 12125
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USD 0.8896

Multiples of: 2500

            Superfet®      
STD16NF25


Transistor: N-MOSFET; unipolar; 250V; 8.5A; 85W; DPAK
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STMicroelectronics Availability : 12125
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USD 0.894

Multiples of: 2500

                   
DMP3028LSD-13


30V 6A 1.3W 25mO@10V,7A 2 P-Channel SO-8 MOSFETs ROHS
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Diodes Incorporated Availability : 12120
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USD 0.209

Multiples of: 1

6 A30 V25 mOhmsP - Channel 1 V- 55 C+ 150 C1.7 WSmd/SmtSO - 8ReelSi2 Channel- 10 V22 nCEnhancement  
CR4N65A4K


650V 4A 2.4Ω@10V,2A 75W 4V@250uA 2.1pF@25V N Channel 564pF@25V 15.8nC@10V +150℃@(Tj) TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

CRMICRO Availability : 12114
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USD 0.1142

Multiples of: 5

                   
L2N7002WT1G


MOSFET N Trench 60V 115mA 2.5V @ 250uA 7.5 Ω @ 500mA,10V SC-70 (SC-70-3) RoHS
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Leshan Availability : 12100
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USD 0.01

Multiples of: 50

                   
SQ4937EY-T1_BE3


MOSFET DUAL P-CHANNEL 30V
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Vishay Availability : 12100
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USD 0.5888

Multiples of: 1

5 A30 V56 mOhmsP - Channel - 20 V , + 20 V15 n C- 55 C+ 175 CSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi2 Channel56 mOhms2.5 V3.3 WEnhancement 
BSD223P H6327


Infineon Technologies MOSFET P-Ch DPAK-2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 12077
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USD 0.0605

Multiples of: 1

390 mA20 V700 mOhmsP - Channel 1.2 V- 55 C+ 150 C250 mWSmd/SmtSOT - 363 - 6ReelSi1 Channel12 V- 620 pCEnhancement  
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