About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDC6320C


MOSFET SSOT-6 COMP N-P-CH
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ON Semiconductor Availability : 12367
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USD 0.2714

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220 mA , 120 mA25 V10.6 Ohmsn and p - channel  - 55 C+ 150 C900 mWsmd/smtSSOT - 6Reelsi2 channel8 V enhancement  
BSS214NW H6327


Infineon Technologies MOSFET N-Ch 20V 1.5A SOT-323-3
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Infineon Availability : 12355
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USD 0.0484

Multiples of: 1

1.5 A20 V106 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 323 - 3ReelSi1 Channel12 V800 pCEnhancement  
SI7615ADN-T1-GE3


MOSFET -20V 4.4mOhm@10V 35A P-Ch G-III
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Vishay Availability : 12355
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USD 0.2425

Multiples of: 1

   P Channel      POWERPAK 1212 - 8Reel       
SI1442DH-T1-BE3


N-Channel 12V 4A (Ta) 1.56W (Ta) Surface Mount SC-70-6
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Vishay Availability : 12346
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USD 0.0759

Multiples of: 1

4 A12 V20 mOhmsN - Channel 1 V- 55 C+ 150 C1.56 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 8 V , + 8 V33 nCEnhancement TrenchFET
BSS138LT3G-ES


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper Availability : 12340
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USD 0.0071

Multiples of: 10

                   
S8205A


MOSFET 2 N Channel (Dual) 20V 5A (Tj) 1V @ 250uA 25 mΩ @ 5A,4V SOT-23-6 RoHS
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Hottech Availability : 12339
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USD 0.0234

Multiples of: 1

                   
Si2305CDS-T1-GE3


mosfet p trench 8v 5.8a 1v @ 250ua 35 m @ 4.4a,4.5v sot-23 (sot-23-3) rohs
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Vishay Availability : 12328
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USD 0.0479

Multiples of: 5

                   
DMC1229UFDB-13


Diodes Incorporated MOSFET Comp ENH Mode FET 12V Vdss 8V VGss
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Diodes Incorporated Availability : 12328
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USD 0.1518

Multiples of: 1

           Reel       
WPM2015-3/TR


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 12319
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USD 0.0309

Multiples of: 10

                   
UM6K33NTN


ROHM Semiconductor MOSFET
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ROHM Availability : 12317
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USD 0.0616

Multiples of: 1

200 mA50 V1.6 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 363 - 6Tape And ReelSi2 Channel8 V Enhancement  
BSO040N03MS G


MOSFET OptiMOS 3 M-Series PWR-MOSFET N-CH
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Infineon Availability : 12309
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USD 0.6215

Multiples of: 1

20 A30 V3.3 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtSO - 8ReelSi1 Channel20 V73 nCEnhancement Optimos
FDT86246


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor Availability : 12295
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USD 0.4961

Multiples of: 1

2 A150 V236 mOhmsN - Channel   + 150 C2.2 WSmd/SmtSOT - 223ReelSi1 Channel 2.9 nC  Powertrench
IPB60R120P7ATMA1


Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
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Infineon Availability : 12288
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USD 1.353

Multiples of: 1

            Coolmos P7      
BSC123N10LSGATMA1


Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
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Infineon Availability : 12287
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USD 0.6677

Multiples of: 1

            Optimos 2      
LP0404N3T5G


MOSFET P Trench 20V 1.4A 1.2V @ 250uA 480 mΩ @ 780mA,4.5V SOT-883 RoHS
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Leshan Availability : 12278
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USD 0.0125

Multiples of: 20

                   
2SK3018


30V 100mA 200mW 8Ω@4V,10mA N Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics Availability : 12270
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USD 0.0092

Multiples of: 50

                   
STP10NK80Z


Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3
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STMicroelectronics Availability : 12266
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USD 2.2634

Multiples of: 1

            Supermesh      
FQD12N20LTM-F085


MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab
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ON Semiconductor Availability : 12248
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USD 0.5016

Multiples of: 1

9 A200 V280 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V Enhancement  
BSC090N03LS G


Infineon Technologies MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 12247
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USD 0.2587

Multiples of: 1

13 A30 V9 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V18 nCEnhancement Optimos
IPG20N04S4L07AATMA1


MOSFET N-Ch 40V 20A TDSON-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 12220
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USD 0.8096

Multiples of: 1

20 A40 V7.2 mOhmsN - Channel 1.7 V- 55 C+ 175 C65 WSmd/SmtTDSON - 8Cut TapeSi2 Channel16 V39 nCEnhancementAec - Q101 
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