The SCT50N120 with MOSFET Silicon Carbide Power MOSFET, 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) is a Silicon Carbide Power MOSFET designed and manufactured by STMicroelectronics. This device is rated for 1200 Volts, with a current capability of up to 65 Amps. It has a low on-resistance of 59 mOhms (typ. TJ = 150 C), and is housed in a HiP247 package for added thermal and electrical performance. This Power MOSFET is also designed for low on-state power losses through its fast switching capability, allowing high system efficiency. Furthermore, this product is optimized for excellent thermal behavior, allowing it to handle larger currents and voltages.