About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
Manufacturer
Global Stock ⓘ (▲▼)Price(USD

(Ex. GST)(▲▼)
Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
C3M0025065K


SiC MOSFETs 650V MOSFET 25mOHMS SiC MOSFET
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Wolfspeed Availability : 24
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USD 19.5376

Multiples of: 1

Through Hole N - Channel1 Channel650 V97 A25 mOhms- 8 V , + 19 V3.6 V112 nC- 40 C+ 175 C326 WEnhancement  
SCTWA35N65G2V


SiC MOSFETs 650 V 45 A 75 mOhm
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STMicroelectronics Availability : 9
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USD 16.8909

Multiples of: 1

Through Hole N - Channel1 Channel650 V45 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 200 C240 WEnhancement  
C3M0032120D


SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET
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Wolfspeed Availability : 9
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USD 17.6245

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV63 A32 mOhms- 4 V , + 15 V3.6 V114 nC- 40 C+ 175 C283 WEnhancement  
IMBF170R450M1XTMA1


SiC MOSFETs Y
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Infineon Availability : 9
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USD 6.8947

Multiples of: 1

SMD/SMT N - Channel1 Channel1.7 kV9.8 A450 mOhms- 10 V , + 20 V4.5 V11 nC- 55 C+ 175 C107 WEnhancement CoolSiC
C2M0080120D


SiC MOSFETs ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
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Wolfspeed Availability : 8
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USD 14.3438

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV31.6 A98 mOhms- 5 V , + 20 V4 V71 nC- 55 C+ 150 C208 WEnhancement  
AIMZH120R040M1TXKSA1


SiC MOSFETs Y
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Infineon Availability : 6
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USD 13.7475

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV55 A40 mOhms- 5 V , + 23 V5.1 V43 nC- 55 C+ 175 C268 WEnhancement CoolSiC
SCT3030ALGC11


SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS
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ROHM Availability : 6
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USD 22.6872

Multiples of: 1

Through Hole N - Channel1 Channel650 V70 A30 mOhms22 V5.6 V104 nC- 55 C+ 175 C262 WEnhancement  
SCT3030ALHRC11


SiC MOSFETs 650V 70A 262W SIC 30mOhm TO-247N
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ROHM Availability : 5
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USD 45.3262

Multiples of: 1

Through Hole N - Channel1 Channel650 V70 A30 mOhms- 4 V , + 22 V2.7 V104 nC- 55 C+ 175 C262 WEnhancementAEC - Q101 
SCT20N120AG


SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm typ Tj = 15
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STMicroelectronics Availability : 4
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USD 18.69

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A239 mOhms- 20 V , + 20 V3.5 V45 nC- 55 C+ 200 C175 WEnhancementAEC - Q101 
AIMZH120R030M1TXKSA1


SiC MOSFETs Y
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Infineon Availability : 3
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USD 18.2254

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV69 A30 mOhms- 5 V , + 23 V5.1 V57 nC- 55 C+ 175 C326 WEnhancement CoolSiC
NTHL1000N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
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ON Semiconductor Availability : 1
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USD 2.596

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV 960 mOhms- 15 V , + 20 V4.3 V13.9 nC- 55 C+ 175 C Enhancement EliteSiC
NVBG1000N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
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ON Semiconductor Availability : 1
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USD 3.96

Multiples of: 1

SMD/SMT N - Channel1 Channel1.7 kV4.3 A1.43 Ohms- 15 V , + 25 V3.2 V14 nC- 55 C+ 175 C25 WEnhancement EliteSiC
C3M0045065J1-TR


SiC MOSFETs SiC, MOSFET 45mohm, 650V TO-263-7XL, T&R, Industrial
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Wolfspeed Availability : 1
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USD 13.4917

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V47 A60 mOhms- 8 V , + 19 V3.6 V61 nC- 40 C+ 150 C147 WEnhancement  
SCTWA20N120


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm
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STMicroelectronics Availability : 1
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USD 15.232

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A239 mOhms- 10 V , + 25 V3.5 V45 nC- 55 C+ 200 C175 WEnhancement  
SCTWA30N120


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm
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STMicroelectronics Availability : 1
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USD 33.7467

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV45 A100 mOhms- 10 V , + 25 V3.5 V105 nC- 55 C+ 200 C270 WEnhancement  
SCT055HU65G3AG


HU3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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STMicroelectronics Availability : 0
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USD 14.9869

Multiples of: 1

                
SC102N170T8L


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SPS Availability : 0
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USD 2.0934

Multiples of: 1

                
ADP120N080G2


TO-220 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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ANHI Availability : 0
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USD 2.5383

Multiples of: 1

                
IMWH170R1K0M1XKSA1


SiC MOSFETs SIC DISCRETE
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Infineon Availability : 0
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USD 2.739

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV5.4 A880 mOhms- 10 V , + 20 V5.7 V5.5 nC- 55 C+ 175 C70 WEnhancement CoolSiC
SC160N120T8L


TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SPS Availability : 0
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USD 2.8726

Multiples of: 1

                
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