About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
Manufacturer
Global Stock ⓘ (▲▼)Price(USD

(Ex. GST)(▲▼)
Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
ADQ120N040BH


TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ANHI Availability : 0
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USD 16.5326

Multiples of: 1

                
SCTWA35N65G2V


SiC MOSFETs 650 V 45 A 75 mOhm
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STMicroelectronics Availability : 0
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USD 16.8909

Multiples of: 1

Through Hole N - Channel1 Channel650 V45 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 200 C240 WEnhancement  
NVBG060N090SC1


SiC MOSFETs 60MOHM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 18.2894

Multiples of: 1

SMD/SMT N - Channel1 Channel900 V44 A84 mOhms- 8 V , + 22 V4.3 V88 nC- 55 C+ 175 C211 WEnhancementAEC - Q101EliteSiC
NVBG080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm , 1200 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 18.4371

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV30 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C179 WEnhancementAEC - Q101EliteSiC
HC3M0021120D


TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS Availability : 0
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USD 18.8849

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IV1Q12050T3


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip Availability : 0
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USD 19.0302

Multiples of: 1

                
NVH4L040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 19.0554

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV58 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C319 WEnhancement EliteSiC
NVBG030N120M3S


SiC MOSFETs SIC MOS D2PAK-7L 30MOHM 1200V M3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 19.063

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV54 A39 mOhms- 10 V , + 22 V4.4 V107 nC- 55 C+ 175 C348 WEnhancement EliteSiC
IMW120R014M1HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 19.393

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV127 A14 mOhms- 10 V , + 23 V4.2 V110 nC- 55 C+ 150 C455 WEnhancement  
NTBG040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 20.0742

Multiples of: 800

SMD/SMT N - Channel1 Channel1.2 kV60 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C357 WEnhancement EliteSiC
SCT040HU65G3AG


HU3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 20.259

Multiples of: 1

                
DMWSH120H23SM4


SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 0
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USD 20.4585

Multiples of: 1

                
NTHL040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 20.6286

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV60 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C348 WEnhancement EliteSiC
IMZA65R007M2HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 20.713

Multiples of: 1

Through Hole N - Channel1 Channel650 V210 A8.5 mOhms- 18 V , + 18 V5.6 V439 nC- 55 C+ 175 C625 WEnhancement CoolSiC
SC013N120TCL


TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS Availability : 0
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USD 21.5214

Multiples of: 1

                
C3M0025065D


SiC MOSFETs 650V MOSFET 25mOHMS SiC MOSFET
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Wolfspeed Availability : 0
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USD 21.8309

Multiples of: 1

Through Hole N - Channel1 Channel650 V97 A25 mOhms- 8 V , + 19 V3.6 V108 nC- 40 C+ 175 C326 WEnhancement  
NTC040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 21.8925

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV60 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C348 WEnhancement EliteSiC
SCT3030ALGC11


SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 0
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USD 21.967

Multiples of: 1

Through Hole N - Channel1 Channel650 V70 A30 mOhms22 V5.6 V104 nC- 55 C+ 175 C262 WEnhancement  
IV1Q12030T4G


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip Availability : 0
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USD 22.0188

Multiples of: 1

                
NTCTR028N170M1


SiC MOSFETs SIC MOS TNR 28MOHM 1700V M1
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ON Semiconductor Availability : 0
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USD 22.1217

Multiples of: 1

                
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