About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
IV1Q12750T3


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip Availability : 0
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USD 3.4792

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G2R1000MT17D


SiC MOSFETs 1700V 1000mohm TO-247-3 G2R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 0
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USD 3.949

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Through Hole N - Channel1 Channel1.7 kV5 A1 Ohms- 5 V , + 20 V4.5 V11 nC- 55 C+ 175 C44 WEnhancement  
IV2Q171R0D7


TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip Availability : 0
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USD 4.5204

Multiples of: 1

                
C3M0280090J-TR


SiC MOSFETs G3 SiC MOSFET/ Reel 900V, 280 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed Availability : 0
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USD 4.5922

Multiples of: 800

Smd/Smt N - Channel1 Channel900 V11 A385 mOhms- 8 v , + 18 V1.8 V9.5 nC- 55 C+ 150 C50 WEnhancement  
IV1Q12750O3


TO-220-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 4.6047

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SC060N065T8L


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SPS Availability : 0
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USD 4.6229

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SC075N120T8L


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SPS Availability : 0
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USD 5.0775

Multiples of: 1

                
IMZA65R040M2HXKSA1


SiC MOSFETs Y
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Infineon Availability : 0
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USD 5.0782

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Through Hole N - Channel1 Channel650 V46 A49 mOhms- 7 V , + 23 V5.6 V28 nC- 55 C+ 175 C172 WEnhancement CoolSiC
C2M1000170D


SiC MOSFETs SIC MOSFET 1700V RDS ON 1 Ohm
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Wolfspeed Availability : 0
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USD 5.4541

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV4.9 A1.4 Ohms- 5 V , + 20 V4 V13 nC- 55 C+ 150 C69 WEnhancement  
SCTH35N65G2V-7


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 45 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 5.4962

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V45 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 175 C208 WEnhancement  
UF3C170400K3S


SiC MOSFETs 1700V/400mOhms,SICFET,G3,TO247-3
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Qorvo Availability : 0
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USD 5.7198

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV7.6 A1.07 Ohms- 25 V , + 25 V6 V27.5 nC- 55 C+ 175 C100 WEnhancementAEC - Q101SiC FET
IV2Q171R0D7Z


TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 5.7441

Multiples of: 1

                
SP35N120CTF


TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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Siliup Availability : 0
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USD 5.7854

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IMZA65R033M2HXKSA1


SiC MOSFETs CoolSiC MOSFET 650 V, 33 mohm G2
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Infineon Availability : 0
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USD 6.138

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Through Hole N - Channel1 Channel650 V53 A41 mOhms- 10 V , + 25 V5.6 V34 nC- 55 C+ 175 C194 WEnhancement CoolSiC
DMWSH120H80SM3


SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 0
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USD 6.2341

Multiples of: 1

                
DMWSH120H80SM4


SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
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Diodes Incorporated Availability : 0
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USD 6.2341

Multiples of: 1

                
NTBG160N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
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ON Semiconductor Availability : 0
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USD 6.3873

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SMD/SMT N - Channel1 Channel1.2 kV19.5 A224 mOhms- 15 V , + 25 V4.3 V33.8 nC- 55 C+ 175 C136 WEnhancement EliteSiC
IMW120R040M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 0
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USD 7.183

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV55 A39 mOhms- 10 V , + 23 V4.2 V39 nC- 55 C+ 150 C227 WEnhancement  
IV1Q12080T4


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 7.7804

Multiples of: 1

                
SCT10N120


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm
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STMicroelectronics Availability : 0
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USD 7.8592

Multiples of: 1

Through Hole N - Channel1 Channel1200 V12 A500 mOhms25 V1.8 V22 nC- 55 C+ 200 C150 WEnhancement Hip247â ¢
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