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SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Global Stock ⓘ (▲▼)Price(USD) 

(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
LSIC1MO120E0120


SiC MOSFETs 1200 V 120 mOhm SiC Mosfet
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Littelfuse Availability : 0
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USD 11.5908

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV27 A150 mOhms20 v , - 5 V1.8 V80 nC- 55 C+ 150 C139 WEnhancement  
UJ3C120080K3S


SiC MOSFETs 1200V/80mOhms,SICFET,G3,TO247-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Qorvo Availability : 0
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USD 11.6675

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV33 A100 mOhms- 25 V , + 25 V4 V51 nC- 55 C+ 175 C254.2 WEnhancementAEC - Q101SiC FET
IV1Q06060T4G


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip Availability : 0
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USD 11.7024

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IV1Q06040T4


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 12.1746

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SC015N065T8L


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SPS Availability : 0
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USD 12.3678

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SC015N065TCL


TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SPS Availability : 0
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USD 12.6935

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IMBG120R017M2HXTMA1


SiC MOSFETs Y
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Infineon Availability : 0
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USD 13.024

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV107 A17.1 mOhms- 7 V , + 20 V5.1 V89 nC- 55 C+ 175 C470 WEnhancement  
SCTW35N65G2V


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 45 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 13.5686

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Through Hole N - Channel1 Channel650 V45 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 200 C240 WEnhancement  
IV1Q06040L1


TOLL Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 13.6223

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NTBG045N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 13.7025

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V62 A50 mOhms- 8 V , + 22 V4.3 V105 nC- 55 C+ 175 C121 WEnhancement EliteSiC
IMBG65R048M1HXTMA1


SiC MOSFETs Y
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Infineon Availability : 0
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USD 13.7443

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IMW120R045M1


SiC MOSFETs SIC DISCRETE
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Infineon Availability : 0
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USD 14.0062

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NVH4L080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?4L
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ON Semiconductor Availability : 0
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USD 14.6637

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Through Hole N - Channel1 Channel1.2 kV29 A80 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C170 WEnhancement EliteSiC
SC021N120T8L


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS Availability : 0
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USD 14.8301

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IV1Q12050T4


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 14.8468

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IV1Q12050D7Z


TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 15.1778

Multiples of: 1

                
IV1Q12080T3Z


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 15.4494

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SCTW35N65G2VAG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 15.7525

Multiples of: 1

Through Hole N - Channel1 Channel650 V45 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 200 C240 WEnhancementAEC - Q101 
IV1Q12050T4Z


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip Availability : 0
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USD 15.8506

Multiples of: 1

                
NVH4L060N090SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 60 mohm, 900 V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 15.9074

Multiples of: 1

Through Hole N - Channel1 Channel900 V46 A84 mOhms- 10 V , + 19 V4.3 V87 nC- 55 C+ 175 C221 WEnhancement EliteSiC
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