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SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
IV1Q06040L1


TOLL Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip Availability : 0
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USD 13.6223

Multiples of: 1

                
NTBG045N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 13.7025

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V62 A50 mOhms- 8 V , + 22 V4.3 V105 nC- 55 C+ 175 C121 WEnhancement EliteSiC
IMBG65R048M1HXTMA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 13.7443

Multiples of: 1

                
IMW120R045M1


SiC MOSFETs SIC DISCRETE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 13.7723

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IMZC120R017M2HXKSA1


SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2
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Infineon Availability : 0
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USD 13.937

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Through Hole N - Channel1 Channel1.2 kV97 A17 mOhms- 10 V , + 25 V5.1 V89 nC- 55 C+ 175 C382 WEnhancement CoolSiC
NVH4L040N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, TO247-4L SiC MOSFET 1200 V 40 mohm M3S Series in TO247-4LD package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 14.344

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Through Hole N - Channel1 Channel1.2 kV44 A40.8 mOhms- 8 V , + 22 V3.22 V75.2 nC- 55 C+ 175 C235 WEnhancement EliteSiC
NVH4L080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 14.6637

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Through Hole N - Channel1 Channel1.2 kV29 A80 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C170 WEnhancement EliteSiC
SC021N120T8L


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS Availability : 0
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USD 14.8301

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IV1Q12050T4


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 14.8468

Multiples of: 1

                
SCT055HU65G3AG


HU3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 14.9869

Multiples of: 1

                
IV1Q12050D7Z


TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 15.1778

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IV1Q12080T3Z


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 15.4494

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HC1M40120D


TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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HXY MOS Availability : 0
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USD 15.5056

Multiples of: 1

                
SCTW35N65G2VAG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm
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STMicroelectronics Availability : 0
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USD 15.7525

Multiples of: 1

Through Hole N - Channel1 Channel650 V45 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 200 C240 WEnhancementAEC - Q101 
IV1Q12050T4Z


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip Availability : 0
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USD 15.8506

Multiples of: 1

                
NVH4L060N090SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 60 mohm, 900 V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 15.9074

Multiples of: 1

Through Hole N - Channel1 Channel900 V46 A84 mOhms- 10 V , + 19 V4.3 V87 nC- 55 C+ 175 C221 WEnhancement EliteSiC
NSF030120D7A0J


SiC MOSFETs NSF030120D7A0/SOT8070/TO263-7L
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Nexperia Availability : 0
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USD 16.192

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV67 A30 mOhms- 10 V , + 22 V2.9 V113 nC- 55 C+ 175 C306 WEnhancement  
SCT3030ARC15


SiC MOSFETs 650V 70A 30mO NCH SIC MOSFET
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ROHM Availability : 0
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USD 16.247

Multiples of: 1

Through Hole N - Channel1 Channel650 V70 A30 mOhms- 4 V , + 22 V5.6 V104 nC + 175 C262 WEnhancement  
SCT1000N170


SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ 7 A
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STMicroelectronics Availability : 0
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USD 16.3073

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV6 A1 Ohms- 10 V , + 25 V2.1 V14 nC- 55 C+ 200 C120 WEnhancement  
G2R1000MT33J-TR


SiC MOSFETs 3300V 1000mohm TO-263-7 G2R SiC MOSFET
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GeneSiC Semiconductor Availability : 0
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USD 16.3413

Multiples of: 1

                
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