About SiC MOSFETs

SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Global Stock ⓘ (▲▼)Price(USD) 

(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
IMZ120R140M1HXKSA1


N-Channel 1200 V 19A (Tc) 94W (Tc) Through Hole PG-TO247-4-1
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Infineon Availability : 0
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USD 7.887

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Through Hole N - Channel1 Channel1.2 kV19 A182 mOhms- 7 V , + 23 V5.7 V13 nC- 55 C+ 150 C94 WEnhancement CoolSiC
IV1Q12160T3


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 8.3105

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IV1Q12160D7Z


TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 8.4321

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IV1Q12160T4


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 8.7273

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SC032N120T8L


TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SPS Availability : 0
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USD 8.8747

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IV1Q12080T4Z


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 8.9766

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NVH4L160N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-4L
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ON Semiconductor Availability : 0
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USD 8.9845

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV17.3 A224 mOhms- 15 V , + 25 V4.3 V34 nC- 55 C+ 175 C111 WEnhancement EliteSiC
IMZ120R090M1HXKSA1


N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-4-1
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Infineon Availability : 0
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USD 9.261

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV26 A117 mOhms- 7 V , + 23 V5.7 V21 nC- 55 C+ 150 C115 WEnhancement CoolSiC
SCT10N120AG


SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ TJ = 1
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STMicroelectronics Availability : 0
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USD 9.3764

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV12 A500 mOhms- 10 V , + 25 V3.5 V22 nC- 55 C+ 200 C150 WEnhancementAEC - Q101 
SCTH40N120G2V7AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
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STMicroelectronics Availability : 0
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USD 9.507

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV33 A105 mOhms- 10 V , + 22 V5 V63 nC- 55 C+ 175 C250 WEnhancementAEC - Q101 
NTBG080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
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ON Semiconductor Availability : 0
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USD 9.5862

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SMD/SMT N - Channel1 Channel1.2 kV30 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C179 WEnhancement EliteSiC
IV1Q06060T3G


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 9.598

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IV1Q06040T3


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 10.3477

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NTHL080N120SC1A


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
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ON Semiconductor Availability : 0
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USD 10.5732

Multiples of: 30

Through Hole N - Channel1 Channel1.2 kV31 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C178 WEnhancement EliteSiC
IV1Q12080T3


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 0
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USD 10.5938

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E3M0060065K


SiC MOSFETs 650V, SiC MOSFET
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Wolfspeed Availability : 0
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USD 10.6616

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Through Hole   650 V 60 mOhms      Enhancement  
DMWSH120H43SM3


SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
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Diodes Incorporated Availability : 0
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USD 11.0841

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV72.7 A43 mOhms- 8 V , + 19 V2.5 V105 nC- 55 C+ 175 C341 WEnhancement  
NTBG060N090SC1


SiC MOSFETs SIC MOS 60MOHM 900V
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ON Semiconductor Availability : 0
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USD 11.168

Multiples of: 1

SMD/SMT N - Channel1 Channel900 V44 A84 mOhms- 8 V , + 22 V4.3 V88 nC- 55 C+ 175 C211 WEnhancement EliteSiC
C3M0065090J-TR


SiC MOSFETs G3 SiC MOSFET 900V, 65mOhm
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Wolfspeed Availability : 0
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USD 11.34

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SMD/SMT N - Channel1 Channel900 V35 A90 mOhms- 8 V , + 18 V1.8 V30 nC- 55 C+ 150 C113 WEnhancement  
SCT20N120H


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm
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STMicroelectronics Availability : 0
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USD 11.5884

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV20 A239 mOhms- 10 V , + 25 V3.5 V45 nC- 55 C+ 175 C175 WEnhancement  
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