AO4828 60V Dual N-Channel MOSFET General Description Features The AO4828 uses advanced trench technology to V (V) = 60V DS provide excellent R and low gate charge. This DS(ON) I = 4.5A (V = 10V) D GS device is suitable for use as a load switch or in PWM R < 56m (V = 10V) DS(ON) GS applications. R < 77m (V = 4.5V) DS(ON) GS 100% UIS tested 100% Rg tested SOIC-8 D D 1 2 Top View Bottom View Top View S2 D2 G2 D2 S1 D1 G1 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS T =25C 4.5 Continuous Drain A AF T =70C I A Current 3.6 A D B Pulsed Drain Current I 20 DM T =25C 2 A P W D T =70C Power Dissipation 1.28 A B A Avalanche Current I I 19 AR, AS B Repetitive avalanche energy 0.1mH E E 18 mJ AR, AS Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 48 62.5 C/W R JA A Steady-State Maximum Junction-to-Ambient 74 110 C/W C Steady-State Maximum Junction-to-Lead R 35 60 C/W JL Alpha & Omega Semiconductor, Ltd. www.aosmd.comAO4828 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 60 V D GS DSS V =60V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1 2.1 3 V GS(th) DS GS D I On state drain current V =10V, V =5V 20 A GS DS D(ON) V =10V, I =4.5A 46 56 GS D m R Static Drain-Source On-Resistance T =125C 80 100 DS(ON) J V =4.5V, I =3A 64 77 m GS D g Forward Transconductance V =5V, I =4.5A 11 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.74 1 V S GS SD I Maximum Body-Diode Continuous Current 3 A S B I 20 A Pulsed Body Diode Current SM DYNAMIC PARAMETERS C Input Capacitance 450 540 pF iss V =0V, V =30V, f=1MHz C Output Capacitance 60 pF GS DS oss C Reverse Transfer Capacitance 25 pF rss V =0V, V =0V, f=1MHz R Gate resistance 1.3 1.65 2 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 8.5 10.5 nC g Q (4.5V) Total Gate Charge 4.3 5.5 nC g V =10V, V =30V, I =4.5A GS DS D Q Gate Source Charge 1.6 nC gs Q Gate Drain Charge 2.2 nC gd t Turn-On DelayTime 4.7 ns D(on) t Turn-On Rise Time V =10V, V =30V, R =6.7, 2.3 ns r GS DS L R =3 t Turn-Off DelayTime 15.7 ns GEN D(off) t Turn-Off Fall Time 1.9 ns f t I =4.5A, dI/dt=100A/s 27.5 35 rr Body Diode Reverse Recovery Time F ns Q I =4.5A, dI/dt=100A/s 32 nC rr Body Diode Reverse Recovery Charge F A: The value of R is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with JA T =25C. The value in any given application depends on the user s specific board design. A B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The A SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev8: May 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com